价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Newark | IRFS52N15DTRLP | 34 | 1 | Cut Tape | ||||||||
| Arrow Electronics | IRFS52N15DTRLP | 21 | 1 | |||||||||
| Future Electronics | IRFS52N15DTRLP | 8,000 | 800 | Tape & Reel | ||||||||
| DigiKey | IRFS52N15DTRLPCT-ND | 766 | 1 | Cut Tape | ||||||||
| Avnet | IRFS52N15DTRLP | 0 | 800 | 6h |
备用零件
Price @ 1000
$ 1.036
$ 2.18
$ 2.18
Stock
284,158
151,967
151,967
Authorized Distributors
6
2
2
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
D2PAK
D2PAK
D2PAK
Drain to Source Voltage (Vdss)
150 V
150 V
150 V
Continuous Drain Current (ID)
51 A
43 A
43 A
Threshold Voltage
-
-
-
Rds On Max
32 mΩ
32 mΩ
32 mΩ
Gate to Source Voltage (Vgs)
30 V
30 V
30 V
Power Dissipation
3.8 W
3.8 W
3.8 W
Input Capacitance
2.77 nF
2.77 nF
2.77 nF
供应链
Country of OriginMainland China, Mexico, Usa
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-09-22
Lifecycle StatusProduction (Last Updated: 1 month ago)
相关零件
InfineonIRFS33N15DTRLP
Power MOSFET(Vdss=150V, Rds(on)max=0.056ohm, Id=33A) | MOSFET N-CH 150V 33A D2PAK
InfineonIRFS23N15DTRLP
N CH SMPS MOSFET, HEXFET, 150V, 23A, D2PAK; Transistor Polarity:N Channel; Conti
描述
由其分销商提供的 Infineon IRFS52N15DTRLP 的描述。
Single N-Channel 150V 32 mOhm 89 nC HEXFET® Power Mosfet - D2PAK
150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
Infineon SCT
Trans MOSFET N-CH 150V 51A 3-Pin (2+Tab) D2PAK T/R
IRFS52N15DTRLP,MOSFET, 150V, 6 0A, 32 MOHM, 60 NC QG, D2-PAK
HEXFET Power MOSFET; Transistor Type:MOSFET; Continuous Drain Current, Id:60A; Drain Source Voltage, Vds:150V; On Resistance, Rds(on):32mohm; Rds(on) Test Voltage, Vgs:30V; Power Dissipation, Pd:320W
Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)51 A
Drain to Source Breakdown Voltage150 V
Drain to Source Resistance32 mΩ
Drain to Source Voltage (Vdss)150 V
Dual Supply Voltage150 V
Element ConfigurationSingle
Fall Time25 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance2.77 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation3.8 W
Min Breakdown Voltage150 V
Min Operating Temperature-55 °C
Nominal Vgs5 V
Number of Channels1
Number of Elements1
On-State Resistance32 mΩ
Package Quantity800
Power Dissipation3.8 W
Rds On Max32 mΩ
Rise Time47 ns
Schedule B8541290080
TerminationSMD/SMT
Turn-Off Delay Time28 ns
Turn-On Delay Time16 ns
Dimensions
Height5.084 mm