Infineon IRFS23N15DTRLP

Name: Infineon IRFS23N15DTRLP
Brand: Infineon
SKU: IRFS23N15DTRLP

N CH SMPS MOSFET, HEXFET, 150V, 23A, D2PAK; Transistor Polarity: N Channel; Conti

Obsolete

制造商页面数据表

价格与库存

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Distributor		SKU		Min	Pkg
Farnell	2	IRFS23N15DTRLP	0	1	Cut Tape	1.240*	0.942*	0.919*	0.848*	0.848*	1d
Microchip USA		IRFS23N15D	111	600	Tube				1.473	1.473	6h
Win Source	2	WS-IRFS23N15D	60	30				1.584	1.287	1.287	15h
Worldway Electronics	2	IRFS23N15D	17,971	7	Tube		1.180	1.144	1.084	1.084	13h
Esaler Electronic		IRFS23N15D	50			1.841	1.823	1.805	1.787	1.770	14h

数据表和文档

下载 Infineon IRFS23N15DTRLP 的数据表和制造商文档。

IHS

Datasheet12 页21 年前

Datasheet12 页25 年前

DigiKey

供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2000-04-17

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2013-10-03

LTD Date2014-04-03

描述

由其分销商提供的 Infineon IRFS23N15DTRLP 的描述。

N CH SMPS MOSFET, HEXFET, 150V, 23A, D2PAK; Transistor Polarity:N Channel; Conti

Newark

Power MOSFET(Vdss=150V, Rds(on)max=0.090ohm, Id=23A) | MOSFET N-CH 150V 23A D2PAK

Win Source

Single N-Channel 150 V 90 mOhm 37 nC HEXFET® Power Mosfet - D2PAK

Future Electronics

150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

Infineon SCT

Trans MOSFET N-CH 150V 23A 3-Pin(2+Tab) D2PAK T/R

Verical

MOSFET, N-CH, 150V, 23A, TO-263AB; Transistor Polarity: N Channel; Continuous Drain Current Id: 23A; Drain Source Voltage Vds: 150V; On Resistance Rds(on): 0.09ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 5.5V; P

Farnell

Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design

Infineon