备用零件
Price @ 1000
$ 0.946
Stock
208,424
677,024
Authorized Distributors
0
2
Mount
Surface Mount
Surface Mount
Case/Package
D2PAK
D2PAK
Drain to Source Voltage (Vdss)
150 V
150 V
Continuous Drain Current (ID)
41 A
41 A
Threshold Voltage
-
5.5 V
Rds On Max
45 mΩ
45 mΩ
Gate to Source Voltage (Vgs)
30 V
30 V
Power Dissipation
3.1 W
200 W
Input Capacitance
2.52 nF
2.52 nF
供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1999-11-29
Lifecycle StatusObsolete (Last Updated: 7 months ago)
LTB Date2020-10-31
LTD Date2021-04-30
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描述
由其分销商提供的 Infineon IRFS41N15DTRLP 的描述。
Single N-Channel 150 V 0.045 Ohm 110 nC HEXFET® Power Mosfet - D2PAK
150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
Infineon SCT
Trans MOSFET N-CH 150V 41A 3-Pin (2+Tab) D2PAK T/R
MOSFET Operating temperature: -55...175 °C Housing type: TO-263 Polarity: N Variants: Enhancement mode Power dissipation: 200 W
Transistor Polarity:n Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:41A; On Resistance Rds(On):0.045Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:5.5V Rohs Compliant: Yes
Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)41 A
Drain to Source Breakdown Voltage150 V
Drain to Source Resistance45 mΩ
Drain to Source Voltage (Vdss)150 V
Element ConfigurationSingle
Fall Time14 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance2.52 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation3.1 W
Min Breakdown Voltage150 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance45 mΩ
Package Quantity800
Power Dissipation3.1 W
Rds On Max45 mΩ
Resistance45 MΩ
Rise Time63 ns
Schedule B8541290080
Turn-Off Delay Time25 ns
Turn-On Delay Time16 ns
Dimensions
Height5.084 mm