备用零件
Price @ 1000
$ 1.375
$ 2.67
$ 2.67
Stock
620,822
366,388
366,388
Authorized Distributors
6
1
1
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
D2PAK
D2PAK
D2PAK
Drain to Source Voltage (Vds)
100 V
100 V
100 V
Continuous Drain Current (ID)
120 A
120 A
120 A
Threshold Voltage
-
-
-
Rds On Max
6 mΩ
6 mΩ
6 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
250 W
250 W
250 W
Input Capacitance
6.86 nF
6.86 nF
6.86 nF
供应链
Country of OriginMainland China, Taiwan, UK
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2012-04-24
Lifecycle StatusProduction (Last Updated: 9 months ago)
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描述
由其分销商提供的 Infineon IRFS4310ZTRLPBF 的描述。
MOSFET N-CH 100V 120A D2PAK N-Channel 100 V 120A (Tc) 250W (Tc) Surface Mount D2PAK
Single N-Channel 100V 6 mOhm 120 nC HEXFET® Power Mosfet - D2PAK
Power MOSFET, N Channel, 100 V, 120 A, 0.006 ohm, TO-263 (D2PAK), Surface Mount
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100V Single N-Channel IR MOSFET in a D2-Pak package, D2PAK-3, RoHS
Infineon SCT
Trans MOSFET N-CH Si 100V 127A 3-Pin(2+Tab) D2PAK T/R
Pwr Mosfet, N Channel, 100V, 120A; |Infineon Technologies IRFS4310ZTRLPBF.
HEXFET POWER MOSFET Power Field-Effect Transistor, 120A I(D), 100V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET, N-CH, 100V, 120A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0048ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; P
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)120 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance6 mΩ
Drain to Source Voltage (Vds)100 V
Fall Time57 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance6.86 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature150 °C
Max Power Dissipation250 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
On-State Resistance6 mΩ
Package Quantity800
Power Dissipation250 W
Rds On Max6 mΩ
Rise Time60 ns
Schedule B8541290080
Turn-Off Delay Time55 ns
Turn-On Delay Time20 ns
Dimensions
Height5.084 mm
Length10.668 mm
Width9.65 mm