供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1980-01-06
Lifecycle StatusProduction (Last Updated: 1 month ago)
相关零件
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Power MOSFET(Vdss = 75V, Rds(on) = 0.0078Ω, Id = 100A⑥) | MOSFET N-CH 75V 100A D2PAK
描述
由其分销商提供的 STMicroelectronics STB140NF75T4 的描述。
STB140NF75T4 N-CHANNEL MOSFET TRANSISTOR, 120 A, 75 V, 3-PIN D2PAK
N-CHANNEL 75V - 0.0065OHM -120A D2PAK STripFET II MOSFET
Power MOSFET, N Channel, 75 V, 120 A, 0.0075 ohm, TO-263 (D2PAK), Surface Mount
Trans MOSFET N-CH 75V 120A 3-Pin(2+Tab) D2PAK T/R
Power Field-Effect Transistor, 120A I(D), 75V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263
STMicroelectronics NChannel EnhancedMOSTube STripFET F3series, Vds=75 V, 120 A, D2PAK (TO-263)encapsulation, surface mount, 3Pin
MOSFET, N CH, 75V, 120A, TO-263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:70A; Drain Source Voltage Vds:75V; On Resistance Rds(on):0.0065ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Po
Mosfet, N Ch, 75V, 120A, D2Pak; Transistor, Polaridad:Canal N; Intensidad Drenador Continua Id:70A; Tensión Drenaje-Fuente Vds:75V; Resistencia De Activación Rds(On):6.5Mohm; Tensión Vgs De Medición Rds(On):10V; Tensión Umbral Vgs:4V |Stmicroelectronics STB140NF75T4
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageD2PAK
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)120 A
Current Rating120 A
Drain to Source Breakdown Voltage75 V
Drain to Source Resistance7.5 mΩ
Drain to Source Voltage (Vdss)75 V
Dual Supply Voltage75 V
Element ConfigurationSingle
Fall Time90 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance5 nF
Max Operating Temperature175 °C
Max Power Dissipation310 W
Min Breakdown Voltage75 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Elements1
PackagingTape and Reel
Power Dissipation310 W
Rds On Max7.5 mΩ
Resistance7.5 mΩ
Rise Time140 ns
Schedule B8541290080
TerminationSMD/SMT
Threshold Voltage4 V
Turn-Off Delay Time130 ns
Turn-On Delay Time30 ns
Voltage Rating (DC)75 V
Dimensions
Height4.6 mm
Length10.4 mm
Width9.35 mm