备用零件
Price @ 1000
$ 3.37
$ 5.16
Stock
125,594
37,905
Authorized Distributors
2
1
Mount
Surface Mount
Surface Mount
Case/Package
D2PAK
D2PAK
Drain to Source Voltage (Vdss)
75 V
75 V
Continuous Drain Current (ID)
75 A
75 A
Threshold Voltage
-
-
Rds On Max
6.3 mΩ
6.3 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
250 W
200 W
Input Capacitance
5.15 nF
5.15 nF
供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-10-13
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2022-10-15
LTD Date2023-04-15
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描述
由其分销商提供的 Infineon IRFS3307TRLPBF 的描述。
Single N-Channel 75 V 6.3 mOhm 120 nC HEXFET® Power Mosfet - D2PAK
75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
Infineon SCT
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature
Trans MOSFET N-CH 75V 130A 3-Pin(2+Tab) D2PAK T/R
Power Field-Effect Transistor, 75A I(D), 75V, 0.0063ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
N CH POWER MOSFET, HEXFET, 75V, 120A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:75V; On Resistance Rds(on):5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V ;RoHS Compliant: Yes
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)75 A
Current Rating130 A
Drain to Source Breakdown Voltage75 V
Drain to Source Resistance6.3 mΩ
Drain to Source Voltage (Vdss)75 V
Element ConfigurationSingle
Fall Time63 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance5.15 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature150 °C
Max Power Dissipation200 W
Min Breakdown Voltage75 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance6.3 mΩ
Package Quantity800
PackagingBulk
Power Dissipation250 W
Rds On Max6.3 mΩ
Resistance6.3 MΩ
Rise Time120 ns
Turn-Off Delay Time51 ns
Turn-On Delay Time26 ns
Voltage Rating (DC)75 V
Dimensions
Height4.572 mm
Length10.668 mm
Width9.65 mm