Infineon IRFS41N15DPBF

Name: Infineon IRFS41N15DPBF
Brand: Infineon
SKU: IRFS41N15DPBF

Single N-Channel 150 V 45 mOhm 72 nC HEXFET® Power Mosfet - D2PAK

$ 0.946

Obsolete

制造商页面数据表

价格与库存

授权分销商

未经授权的库存分销商

非授权经销商

查看所有价格优惠

Distributor	SKU		Min	Pkg
Rochester Electronics	IRFS41N15DPBF	11,550					1.140	0.946	0.844	6h
RS (Formerly Allied Electronics)	IRFS41N15DPBF	0	3200	Bulk					4.210	22h
Farnell	IRFS41N15DPBF	0	1		2.984*	2.984*	1.935*	1.812*	1.812*	5h
Verical	IRFS41N15DPBF	11,550	264					1.183	1.055
Component Stockers USA	IRFS41N15DPBF	358			0.950	0.950	0.900	0.900	0.900	2d

数据表和文档

下载 Infineon IRFS41N15DPBF 的数据表和制造商文档。

IHS

Datasheet13 页9 年前

Datasheet13 页19 年前

Newark

iiiC

DigiKey

库存历史记录

3 个月趋势:

-6.48%

CAD 模型

从我们值得信赖的合作伙伴处下载 Infineon IRFS41N15DPBF 符号、封装和 3D STEP 模型。

来源	eCAD	mCAD	文件
SnapEDA	封装		下载

下载 CAD 模型时，合作伙伴网站将在新标签页中打开

从 Octopart 下载 CAD 模型，即表示您同意我们的条款和条件以及隐私政策。

供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1999-11-29

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2018-12-15

LTD Date2019-06-15

描述

由其分销商提供的 Infineon IRFS41N15DPBF 的描述。

Single N-Channel 150 V 45 mOhm 72 nC HEXFET® Power Mosfet - D2PAK

Future Electronics

150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

Infineon SCT

Trans MOSFET N-CH 150V 41A 3-Pin(2+Tab) D2PAK

Avnet

HEXFET POWER MOSFET Power Field-Effect Transistor, 41A I(D), 150V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

ComSIT Distribution GmbH

MOSFET, N, 150V, 41A, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:41A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.045ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5.5V; Power

element14 APAC

Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design

Infineon