备用零件
Price @ 1000
$ 9.49
$ 1.802
Stock
365,637
540,205
Authorized Distributors
1
6
Mount
Surface Mount
Surface Mount
Case/Package
D2PAK
TO-262
Drain to Source Voltage (Vdss)
200 V
200 V
Continuous Drain Current (ID)
72 A
72 A
Threshold Voltage
5 V
-
Rds On Max
22 mΩ
22 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
375 W
375 W
Input Capacitance
5.38 nF
5.38 nF
供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-09-16
Lifecycle StatusObsolete (Last Updated: 7 months ago)
LTB Date2018-12-15
LTD Date2019-06-15
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描述
由其分销商提供的 Infineon IRFS4127PBF 的描述。
200V Single N-Channel HEXFET Power MOSFET Switch in a D2-Pak package, D2PAK-3, RoHS
Infineon SCT
Single N-Channel 200 V 22 mOhm 150 nC HEXFET® Power Mosfet - D2PAK
Trans MOSFET N-CH 200V 72A 3-Pin(2+Tab) D2PAK Tube
Power Field-Effect Transistor, 72A I(D), 200V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET, N-CH 200V 72A D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:44A; Drain Source Voltage Vds:200V; On Resistance Rds(on):22mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:375W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:72A; Package / Case:D2-PAK; Power Dissipation Pd:375W; Power Dissipation Pd:375W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:200V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)72 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance22 mΩ
Drain to Source Voltage (Vdss)200 V
Dual Supply Voltage200 V
Element ConfigurationSingle
Fall Time22 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance5.38 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation375 W
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Nominal Vgs5 V
Number of Channels1
Number of Elements1
On-State Resistance22 mΩ
Package Quantity1000
Power Dissipation375 W
Rds On Max22 mΩ
Resistance22 MΩ
Rise Time18 ns
TerminationSMD/SMT
Threshold Voltage5 V
Turn-Off Delay Time56 ns
Turn-On Delay Time17 ns
Dimensions
Height5.084 mm
Length10.668 mm
Width9.65 mm