STMicroelectronics STB75NF20

Name: STMicroelectronics STB75NF20
Brand: STMicroelectronics
SKU: STB75NF20

N-channel 200 V, 0.028 Ohm typ., 75 A STripFET(TM) Power MOSFET in D2PAK package

$ 2.859

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Distributor		SKU		Min	Pkg
Newark		STB75NF20	78	1	Cut Tape	6.270	4.820	4.030	3.940	3.940
Verical	3	STB75NF20	11,000	1K					2.922	2.922
Arrow Electronics	3	STB75NF20	1,364	1		2.136	2.136	2.136	2.136	2.136
DigiKey	2	497-5957-1-ND	300	1	Cut Tape	7.250	4.887	3.548	3.366	3.366
TME	2	STB75NF20	0	1		5.452*	4.230*	3.560*	3.161*	3.161*	23h

数据表和文档

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Factory Futures

Datasheet16 页20 年前

Newark

TME

Mouser

库存历史记录

3 个月趋势:

+122%

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供应链

Lifecycle StatusProduction (Last Updated: 4 months ago)

描述

由其分销商提供的 STMicroelectronics STB75NF20 的描述。

N-channel 200 V, 0.028 Ohm typ., 75 A STripFET(TM) Power MOSFET in D2PAK package

STMicroelectronics

STB75NF20 N-channel MOSFET Transistor, 75 A, 200 V, 3-Pin D2PAK

RS (Formerly Allied Electronics)

Power MOSFET, N Channel, 200 V, 37 A, 0.028 ohm, TO-263 (D2PAK), Surface Mount

Avnet

N-channel 200V - 0.028 - 75A - D2PAK - TO-220 - TO-247 Low gate charge STripFET Power MOSFET

Win Source

190W(Tc) 20V 4V@ 250¦ÌA 84nC@ 10 V 1N 200V 34m¦¸@ 37A,10V 75A 3.26nF@25V D2PAK 4.83mm

Unikeyic (ICkey)

Trans MOSFET N-CH 200V 75A 3-Pin(2+Tab) D2PAK T/R

Verical

MOSFET, N CH, 200V, 75A, D2PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 37A; Drain Source Voltage Vds: 200V; On Resistance Rds(on): 0.028ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 190W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Current Id Max: 75A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Termination Type: Surface Mount Device; Transistor Type: Power MOSFET; Voltage Vds Typ: 200V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 10V

Farnell

Mosfet, N Ch, 200V, 75A, D2Pak; Transistor, Polaridad:Canal N; Intensidad Drenador Continua Id:37A; Tensión Drenaje-Fuente Vds:200V; Resistencia De Activación Rds(On):28Mohm; Tensión Vgs De Medición Rds(On):10V; Tensión Umbral Vgs:3V |Stmicroelectronics STB75NF20

Newark