onsemi FDB110N15A

Name: onsemi FDB110N15A
Brand: onsemi
SKU: FDB110N15A

N-Channel 150 V 92 A 11 mOhm N-Channel Power Trench Mosfet - D2PAK-3

$ 2.4

Production

制造商页面数据表

价格与库存

授权分销商

未经授权的库存分销商

非授权经销商

查看所有价格优惠

Distributor		SKU		Min	Pkg
Avnet	2	FDB110N15A	1,600	800							21h
Newark	2	FDB110N15A	635	1	Cut Tape	0.967	0.967	0.967	0.967	0.967
Rochester Electronics		FDB110N15A	20,056					2.410	2.160	2.030	19h
Verical	3	FDB110N15A	518	6			1.151	1.115	1.078	1.078
Arrow Electronics		FDB110N15A	518	1		1.170	1.151	1.115	1.078	1.078

数据表和文档

下载 onsemi FDB110N15A 的数据表和制造商文档。

Master Electronics

Datasheet0 页0 年前

Upverter

IHS

onsemi

Fairchild Semiconductor

库存历史记录

3 个月趋势:

-4.07%

CAD 模型

从我们值得信赖的合作伙伴处下载 onsemi FDB110N15A 符号、封装和 3D STEP 模型。

来源	eCAD	mCAD	文件
Component Search Engine	符号封装	3D	下载
EE Concierge	符号封装

下载 CAD 模型时，合作伙伴网站将在新标签页中打开

从 Octopart 下载 CAD 模型，即表示您同意我们的条款和条件以及隐私政策。

供应链

Country of OriginMainland China, Malaysia

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2011-05-04

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

描述

由其分销商提供的 onsemi FDB110N15A 的描述。

N-Channel 150 V 92 A 11 mOhm N-Channel Power Trench Mosfet - D2PAK-3

Future Electronics

N-Channel PowerTrench® MOSFET 150V, 92A, 11mΩ

onsemi

N CH MOSFET, POWERTRENCH, 150V, 92A, D2PAK - More Details

Jak Electronics

Power Field-Effect Transistor, 92A I(D), 150V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

IHS

MOSFET, N-CH, 150V, 92A, TO-263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:92A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.00925ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V;

element14 APAC

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

Fairchild Semiconductor