Infineon IRFR7746PBF

Name: Infineon IRFR7746PBF
Brand: Infineon
SKU: IRFR7746PBF

HEXFET POWER MOSFET / N-Channel 75 V 56A (Tc) 99W (Tc) Surface Mount D-PAK (TO-252AA)

$ 0.394

Obsolete

制造商页面数据表

价格与库存

授权分销商

未经授权的库存分销商

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Distributor	SKU		Min	Pkg
Rochester Electronics	IRFR7746PBF	75				0.474	0.394	0.351	12h
RS (Formerly Allied Electronics)	IRFR7746PBF	0	10	Bulk	2.880	2.590	2.590	2.590	5h
Farnell	IRFR7746PBF	0	5		0.559*	0.537*	0.503*	0.492*	12h
Win Source	WS-IRFR7746PBF	333	240				0.168	0.141	13h
Worldway Electronics	IRFR7746PBF	15,043	7	Tube	0.121	0.117	0.111	0.111	1d

数据表和文档

下载 Infineon IRFR7746PBF 的数据表和制造商文档。

IHS

Datasheet13 页11 年前

Datasheet12 页11 年前

TME

Future Electronics

库存历史记录

3 个月趋势:

+0.00%

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InfineonIRFR7746PBF

InfineonIRFR7746TRPBF

Price @ 1000

$ 0.394

$ 0.511

Stock

39,419

138,600

Authorized Distributors

Mount

Surface Mount, Through Hole

Surface Mount

Case/Package

DPAK

TO-252-3

Drain to Source Voltage (Vdss)

75 V

Continuous Drain Current (ID)

56 A

Threshold Voltage

3.7 V

Rds On Max

11.2 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

99 W

Input Capacitance

3.107 nF

供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2014-08-19

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2018-12-15

LTD Date2019-06-15

描述

由其分销商提供的 Infineon IRFR7746PBF 的描述。

HEXFET POWER MOSFET / N-Channel 75 V 56A (Tc) 99W (Tc) Surface Mount D-PAK (TO-252AA)

Win Source

Single N-Channel 75 V 11.2 mOhm 59 nC HEXFET® Power Mosfet - DPAK

Future Electronics

75V Single N-Channel HEXFET Power MOSFET in a D-PAK package, DPAK-3, RoHS

Infineon SCT

Power Field-Effect Transistor, 56A I(D), 75V, 0.0112ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

IHS

MOSFET, N-CH, 75V, 59A, TO-252AA-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 59A; Drain Source Voltage Vds: 75V; On Resistance Rds(on): 0.0095ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.7V;

Farnell

Benefits: Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability; Lead-Free, RoHS Compliant; StrongIRFET

Infineon