价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RS (Formerly Allied Electronics) | IRFR2905ZTRLPBF | 0 | 3K | Bulk | 6h | |||||||
| Worldway Electronics | IRFR2905ZTRLPBF | 9,607 | 7 | Tape & Reel | 17h | |||||||
| Suntronic | IRFR2905ZTRLPBF | 5,288 | 3d | |||||||||
| Klychip | IRFR2905ZTRLPBF | 联系方式 | 1 | >1wk | ||||||||
| QUARKTWIN TECHNOLOGY LTD | IRFR2905ZTRLPBF | 联系方式 | >1wk |
供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2003-11-24
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2016-11-16
LTD Date2017-05-16
相关零件
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MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 11 Milliohms;ID 42A;D-Pak (TO-252AA);PD 110W
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Trans MOSFET N-CH 60V 11A Automotive 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 60V 50A D-PAK
描述
由其分销商提供的 Infineon IRFR2905ZTRLPBF 的描述。
55V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 42A I(D), 55V, 0.0145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature | Target Applications: AC-DC
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:59A; On Resistance, Rds(on):14.5mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:DPAK ;RoHS Compliant: Yes
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)42 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance14.5 mΩ
Drain to Source Voltage (Vdss)55 V
Element ConfigurationSingle
Fall Time35 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.38 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation110 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance14.5 mΩ
Package Quantity3000
Power Dissipation110 W
Rds On Max14.5 mΩ
Rise Time66 ns
Turn-Off Delay Time31 ns
Turn-On Delay Time14 ns
Dimensions
Height2.26 mm
Length6.7056 mm
Width6.22 mm