Infineon IRFP140NPBF

Name: Infineon IRFP140NPBF
Brand: Infineon
SKU: IRFP140NPBF

MOSFET, Power; N-Channel; 0.052 Ohms (Max.) @ 10 V, 16 A; 100 V (Min.); 40 degC

$ 1.006

Production

制造商页面数据表

价格与库存

授权分销商

未经授权的库存分销商

非授权经销商

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Distributor		SKU		Min	Pkg
Newark		IRFP140NPBF	797	1		2.840	1.580	1.280	1.000	1.000
Future Electronics	2	IRFP140NPBF	650	25	Tube			1.610	1.570	1.540
Arrow Electronics	2	IRFP140NPBF	5,100	1		0.961	0.961	0.780	0.764	0.722
Rutronik		TMOS1171	24	1				0.762	0.647	0.647	18h
Avnet		IRFP140NPBF	0	25				0.744	0.712	0.712	13h

数据表和文档

下载 Infineon IRFP140NPBF 的数据表和制造商文档。

Newark

Datasheet10 页21 年前

Datasheet9 页21 年前

Datasheet9 页22 年前

IHS

DigiKey

RS (Formerly Allied Electronics)

iiiC

库存历史记录

3 个月趋势:

-19.78%

CAD 模型

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供应链

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1998-01-01

Lifecycle StatusProduction (Last Updated: 3 months ago)

LTB Date2008-03-13

LTD Date2008-09-13

描述

由其分销商提供的 Infineon IRFP140NPBF 的描述。

MOSFET, Power; N-Channel; 0.052 Ohms (Max.) @ 10 V, 16 A; 100 V (Min.); 40 degC

RS (Formerly Allied Electronics)

In a Tube of 25, IRFP140NPBF N-Channel MOSFET, 33 A, 100 V HEXFET, 3-Pin TO-247AC Infineon

Utmel Electronic

Single N-Channel 100 V 0.052 Ohm 94 nC HEXFET® Power Mosfet - TO-247-3AC

Future Electronics

Power MOSFET, HEXFET, N Channel, 100 V, 33 A, 0.052 ohm, TO-247AC, Through Hole

Avnet

100V Single N-Channel HEXFET Power MOSFET in a TO-247AC package, TO247-3, RoHS

Infineon SCT

33A, 100V, 0.040 Ohm, N-Channel Power MOSFET | MOSFET N-CH 100V 33A TO-247AC

Win Source

HEXFET POWER MOSFET Power Field-Effect Transistor, 33A I(D), 100V, 0.052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC

ComSIT Distribution GmbH

MOSFET, N; Transistor Polarity:N Channel; Continuous Drain Current Id:33A; Drain Source Voltage Vds:100V; On Resistance Rds(on):52mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:94W; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:33A; Package / Case:TO-247AC; Power Dissipation Pd:94W; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

element14 APAC

N Channel Mosfet, 100V, 33A, To-247Ac; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:33A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Msl:- Rohs Compliant: Yes |Infineon IRFP140NPBF.

Newark

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Infineon