供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2000-03-01
Lifecycle StatusObsolete (Last Updated: 5 months ago)
LTB Date2008-03-11
LTD Date2008-09-11
相关零件
InfineonIPW60R230P6FKSA1
MOSFET N-CH 600V 16.8A TO247-3 / N-Channel 600 V 16.8A (Tc) 126W (Tc) Through Hole PG-TO247-3
描述
由其分销商提供的 onsemi RFG40N10 的描述。
40 A 100 V 0.04 ohm N-CHANNEL Si POWER MOSFET TO-247
Trans MOSFET N-CH Si 100V 40A 3-Pin(3+Tab) TO-247
MOSFET N-CH 100V 40A TO247-3
Power Field-Effect Transistor, 40A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
MISCELLANEOUS MOSFETS;
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-247
MountThrough Hole
Number of Terminals3
Technical
Continuous Drain Current (ID)40 A
Current Rating40 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance40 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time20 ns
Gate to Source Voltage (Vgs)20 V
Max Operating Temperature175 °C
Max Power Dissipation160 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation160 W
Rds On Max40 mΩ
Rise Time30 ns
Turn-Off Delay Time42 ns
Voltage Rating (DC)100 V