价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Newark | IRFH5250TRPBF | 3,000 | 1 | Cut Tape | ||||||||
| Arrow Electronics | IRFH5250TRPBF | 4,000 | 1 | |||||||||
| Future Electronics | IRFH5250TRPBF | 8,000 | 4K | Tape & Reel | ||||||||
| Rochester Electronics | IRFH5250TRPBF | 34,628 | 21h | |||||||||
| DigiKey | IRFH5250TRPBFCT-ND | 7,389 | 1 | Cut Tape |
备用零件
Price @ 1000
$ 0.695
$ 0.81
Stock
720,020
136,279
Authorized Distributors
6
3
Mount
Surface Mount
Surface Mount
Case/Package
QFN EP
TO-252-3
Drain to Source Voltage (Vdss)
25 V
25 V
Continuous Drain Current (ID)
45 A
45 A
Threshold Voltage
1.8 V
1.8 V
Rds On Max
1.15 mΩ
1.15 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
3.6 W
3.6 W
Input Capacitance
7.174 nF
2.93 nF
供应链
Country of OriginMalaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-09-18
Lifecycle StatusNRND (Last Updated: 3 months ago)
相关零件
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描述
由其分销商提供的 Infineon IRFH5250TRPBF 的描述。
Single N-Channel 25 V 1.75 mOhm 110 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm
25V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PG-TDSON-8, RoHS
Infineon SCT
Power MOSFET, N Channel, 25 V, 100 A, 0.00115 ohm, PQFN, Surface Mount
Trans MOSFET N-CH 25V 45A 8-Pin PQFN EP T/R / MOSFET N-CH 25V 45A PQFN
Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:100A; Drain Source Voltage, Vds:25V; On Resistance, Rds(on):0.0015ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1.8V ;RoHS Compliant: Yes
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageQFN EP
MountSurface Mount
Number of Pins8
Number of Terminals5
Technical
Continuous Drain Current (ID)45 A
Drain to Source Breakdown Voltage25 V
Drain to Source Resistance1.75 mΩ
Drain to Source Voltage (Vdss)25 V
Fall Time19 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance7.174 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation250 W
Min Breakdown Voltage25 V
Min Operating Temperature-55 °C
Nominal Vgs1.8 V
Number of Channels1
Number of Elements1
On-State Resistance1.15 mΩ
Package Quantity4000
PackagingTape & Reel
Power Dissipation3.6 W
Rds On Max1.15 mΩ
Resistance1.75 MΩ
Rise Time46 ns
Schedule B8541290080
Threshold Voltage1.8 V
Turn-Off Delay Time30 ns
Turn-On Delay Time28 ns
Dimensions
Height1.1 mm
Length5.9944 mm
Width5 mm