价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Farnell | IRFHM8363TRPBF | 0 | 1 | 7h | ||||||||
| Weyland Electronics Group Pte. Ltd. | IRFHM8363TRPBF | 12,000 | 1 | Tape & Reel | 11h | |||||||
| Win Source | WS-IRFHM8363TRPBF | 28,000 | 95 | 9h | ||||||||
| Worldway Electronics | IRFHM8363TRPBF | 4,687 | 7 | Tape & Reel | 10h | |||||||
| ICPartonline | IRFHM8363TRPBF | 15,330 | 7d |
供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2011-06-29
Lifecycle StatusObsolete (Last Updated: 4 months ago)
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描述
由其分销商提供的 Infineon IRFHM8363TRPBF 的描述。
30V Dual N-Channel HEXFET Power MOSFET in a PQFN 3.3mm x3.3mm Lead Free package
Transistor MOSFET Array Dual N-CH 30V 10A 8-Pin PQFN T/R
Benefits: RoHS Compliant; Low RDS(on); Low Profile (less than 1.1 mm); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified MSL1; Dual N-Channel MOSFET
MOSFET, DUAL, N-CH, 30V, 10A, PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0122ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.8V; Power Dissipation Pd:19W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PQFN; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (20-Jun-2013); Operating Temperature Range:-55°C to +150°C
Transistor Polarity = N-Channel / Configuration = Dual / Continuous Drain Current (Id) A = 10 / Drain-Source Voltage (Vds) V = 30 / ON Resistance (Rds(on)) mOhm = 14.9 / Gate-Source Voltage V = 20 / Fall Time ns = 33 / Rise Time ns = 94 / Turn-OFF Delay Time ns = 12 / Turn-ON Delay Time ns = 14 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = PQFN / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 19
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageQFN EP
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)10 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance14.9 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationDual
Fall Time33 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.165 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation19 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs1.8 V
Number of Channels2
Number of Elements2
On-State Resistance14.9 mΩ
Package Quantity4000
PackagingTape & Reel
Power Dissipation2.7 W
Rds On Max14.9 mΩ
Rise Time94 ns
Schedule B8541290080
Threshold Voltage1.8 V
Turn-Off Delay Time12 ns
Turn-On Delay Time14 ns
Dimensions
Height1 mm