供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-09-17
Lifecycle StatusProduction (Last Updated: 1 month ago)
相关零件
InfineonIRFH5301TRPBF
INFINEON IRFH5301TRPBF MOSFET Transistor, N Channel, 100 A, 30 V, 0.00155 ohm, 10 V, 1.8 VNew
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描述
由其分销商提供的 Infineon IRFH5300TRPBF 的描述。
30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PG-TDSON-8, RoHS
Infineon SCT
Transistor: N-MOSFET; unipolar; HEXFET; 30V; 40A; 3.6W; PQFN5X6
Single N-Channel 30 V 2.1 mOhm 120 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm
MOSFET N-CH 30V 40A PQFN / Trans MOSFET N-CH 30V 40A 8-Pin PQFN EP T/R
MOSFET, N-CH, 30V, 100A, PQFN-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 100A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0011ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Power Dissipation Pd: 250W; Transistor Case Style: PQFN; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageQFN EP
MountSurface Mount
Number of Pins8
Number of Terminals5
Technical
Continuous Drain Current (ID)40 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance2.1 mΩ
Drain to Source Voltage (Vdss)30 V
Fall Time13 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance7.2 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation250 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance1.4 mΩ
Package Quantity4000
PackagingTape & Reel
Power Dissipation3.6 W
Rds On Max1.4 mΩ
Resistance1.4 MΩ
Rise Time30 ns
Schedule B8541290080
Threshold Voltage1.8 V
Turn-Off Delay Time31 ns
Turn-On Delay Time26 ns
Dimensions
Height1.1 mm
Length6 mm
Width5 mm