Infineon IRFH5207TR2PBF

Name: Infineon IRFH5207TR2PBF
Brand: Infineon
SKU: IRFH5207TR2PBF

75V Single N-Channel HEXFET Power MOSFET in a PQFN package

$ 1.3

Obsolete

制造商页面数据表

价格与库存

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Distributor	SKU		Min	Pkg
RS (Formerly Allied Electronics)	IRFH5207TR2PBF	0	800	Bulk				1.300	1.300	13h
Avnet	IRFH5207TR2PBF	0	800							2d
Farnell	IRFH5207TR2PBF	0	1		1.087*	1.087*	0.815*	0.761*	0.761*	20h
Worldway Electronics	IRFH5207TR2PBF	17,497	7	Tape & Reel		0.314	0.305	0.289	0.289	20h
Quest	IRFH5207TR2PBF	264			1.260	1.050	0.588	0.588	0.588	19h

数据表和文档

下载 Infineon IRFH5207TR2PBF 的数据表和制造商文档。

IHS

Datasheet10 页11 年前

Datasheet9 页11 年前

element14 APAC

供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2010-04-12

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2014-05-12

LTD Date2014-11-12

描述

由其分销商提供的 Infineon IRFH5207TR2PBF 的描述。

75V Single N-Channel HEXFET Power MOSFET in a PQFN package

International Rectifier

Trans MOSFET N-CH 75V 13A 8-Pin QFN T/R

Verical

MOSFET PQFN-8 (5x6) N 75V 13 A

Distrelec

MOSFET 75V, Gen 10.7, 10.11 mOhm max, 43.5 nC Qg

RS (Formerly Allied Electronics)

Power Field-Effect Transistor, 13A I(D), 75V, 0.0096ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

IHS

MOSFET,N CH,75V,71A,PQFN56; Transistor Polarity:N Channel; Drain Source Voltage Vds:75V; On Resistance Rds(on):8mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:3.6W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:QFN; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:71A; Power Dissipation Pd:3.6W; Voltage Vgs Max:20V

element14 APAC