Infineon IRFH5006TR2PBF

Name: Infineon IRFH5006TR2PBF
Brand: Infineon
SKU: IRFH5006TR2PBF

60V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package

$ 1.852

Obsolete

制造商页面数据表

价格与库存

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Distributor		SKU		Min	Pkg
RS (Formerly Allied Electronics)		IRFH5006TR2PBF	0	400	Bulk				1.852	1.607	20h
Farnell	2	IRFH5006TR2PBF	0	1	Cut Tape	1.675*	1.675*	1.310*	1.160*	1.160*	3h
Win Source		WS-IRFH5006TR2PBF	9,570	30				1.433	1.164	1.164	4h
Worldway Electronics		IRFH5006TR2PBF	12,723	7			0.457	0.443	0.420	0.420	8h
ICPartonline		IRFH5006TR2PBF	36,026			3.000	2.850	2.700	2.550	2.400	>1wk

数据表和文档

下载 Infineon IRFH5006TR2PBF 的数据表和制造商文档。

IHS

Datasheet8 页14 年前

element14 APAC

Farnell

RS (Formerly Allied Electronics)

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2010-03-16

Lifecycle StatusObsolete (Last Updated: 4 months ago)

描述

由其分销商提供的 Infineon IRFH5006TR2PBF 的描述。

60V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package

International Rectifier

Trans MOSFET N-CH 60V 21A 8-Pin QFN T/R

Verical

HEXFET POWER MOSFET Power Field-Effect Transistor, 21A I(D), 60V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

ComSIT Distribution GmbH

MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0035ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:2V ;RoHS Compliant: Yes

Newark

MOSFET,N CH,60V,21A,PQFN56; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:60V; On Resistance Rds(on):3.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:250W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:QFN; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:100A; Power Dissipation Pd:250W; Voltage Vgs Max:20V

element14 APAC