Infineon IRFF120

Name: Infineon IRFF120
Brand: Infineon
SKU: IRFF120

Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line

$ 17.34

Production

制造商页面数据表

价格与库存

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Distributor	SKU		Min	Pkg
Future Electronics	IRFF120	0	2	Tray		18.610	18.000	18.000	18.000
Arrow Electronics	IRFF120	0	100				16.680	16.680	16.680
Farnell	IRFF120	0	1		15.876*	15.876*	7.830*	6.680*	6.680*	8h
Best Source	IRFF120	23,106			13.739	13.739	13.739	13.739	13.739	18h
SHENGYU ELECTRONICS	IRFF120	3,974	1		13.883	13.606	13.190	12.770	12.220	1d

数据表和文档

下载 Infineon IRFF120 的数据表和制造商文档。

element14 APAC

Datasheet7 页18 年前

IHS

Newark

库存历史记录

3 个月趋势:

Restocked

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InfineonIRFF120

InfineonJANTX2N6788

Price @ 1000

$ 17.34

$ 9.335

Stock

27,092

32,888

Authorized Distributors

Mount

Through Hole

Case/Package

TO-39

Drain to Source Voltage (Vdss)

100 V

Continuous Drain Current (ID)

6 A

Threshold Voltage

4 V

Rds On Max

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

20 W

Input Capacitance

供应链

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date1990-01-01

Lifecycle StatusProduction (Last Updated: 4 months ago)

描述

由其分销商提供的 Infineon IRFF120 的描述。

Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line

Infineon

Single N-Channel 100 V 20 W 18 nC Hexfet Power Mosfet Through Hole - TO-39-3

Future Electronics

Power Field-Effect Transistor, 6A I(D), 100V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF

IHS

N CHANNEL MOSFET, 100V, 6A TO-205AF; Tra; Transistor Polarity:N Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:100V; On Resistance Rds(on):300mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:20W; Transistor Case Style:TO-39; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Avalanche Single Pulse Energy Eas:76mJ; Current Id Max:6A; Current Temperature:25°C; External Length / Height:18.03mm; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; Lead Length:14.22mm; No. of Transistors:1; Package / Case:TO-39; Power Dissipation Pd:20W; Power Dissipation Pd:20W; Pulse Current Idm:24A; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Weight:0.0024kg

element14 APAC