Infineon IRFF130

Name: Infineon IRFF130
Brand: Infineon
SKU: IRFF130

Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line

$ 18

Production

制造商页面数据表

价格与库存

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未经授权的库存分销商

非授权经销商

查看所有价格优惠

Distributor		SKU		Min	Pkg
Flip Electronics		IRFF130	11,320								>1wk
Future Electronics	2	IRFF130	0	2	Tray		18.610	18.000	18.000	18.000
Farnell		IRFF130	0	1		12.598*	12.598*	9.378*	7.010*	7.010*	22h
GreenTree Electronics		IRFF130	64								20h
IC Components Ltd.		IRFF130	1,660			4.670	4.670	4.670	4.670	4.670	5d

数据表和文档

下载 Infineon IRFF130 的数据表和制造商文档。

IHS

Datasheet7 页25 年前

Datasheet7 页7 年前

库存历史记录

3 个月趋势:

+0.00%

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InfineonIRFF130

InfineonJANTX2N6796

Price @ 1000

$ 18

$ 15.255

Stock

20,391

20,287

Authorized Distributors

Mount

Through Hole

Case/Package

TO-39

Drain to Source Voltage (Vdss)

100 V

Continuous Drain Current (ID)

8 A

Threshold Voltage

4 V

Rds On Max

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

25 W

Input Capacitance

供应链

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date1990-01-01

Lifecycle StatusProduction (Last Updated: 4 months ago)

描述

由其分销商提供的 Infineon IRFF130 的描述。

Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line

Infineon

Single N-Channel 100 V 25 W 28.5 nC Hexfet Transistor Through Hole - TO-39

Future Electronics

Power Field-Effect Transistor, 8A I(D), 100V, 0.207ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF

IHS

Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:8A; On Resistance Rds(On):0.18Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; No. Of Pins:3Pins Rohs Compliant: No

Newark

MOSFET, N, TO-39; Transistor Polarity:N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:100V; On Resistance Rds(on):180mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:25W; Transistor Case Style:TO-39; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Avalanche Single Pulse Energy Eas:75mJ; Current Id Max:8A; Current Temperature:25°C; External Length / Height:18.03mm; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; Lead Length:14.22mm; No. of Transistors:1; Package / Case:TO-39; Power Dissipation Pd:25W; Power Dissipation Pd:25W; Pulse Current Idm:32A; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Weight:0.0024kg

element14 APAC