供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1990-01-01
Lifecycle StatusProduction (Last Updated: 4 months ago)
相关零件
InfineonJANTX2N6788
Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line
描述
由其分销商提供的 International Rectifier 2N6845 的描述。
Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line
-100V Single P-Channel Hi-Rel MOSFET in a TO-205AF package
Power Field-Effect Transistor, 2.5A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF
MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-100V; Continuous Drain Current, Id:-4A; On Resistance, Rds(on):600mohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:TO-205AF ;RoHS Compliant: No
制造商别名
International Rectifier 在全球拥有多个品牌，分销商可将其用作替代名称。International Rectifier 也可称为以下名称：
- I&R
- IRF
- IOR
- INT'L RECTIFIER
- INTERNATIONAL RECTIFIER CORP
- INTERNATIONAL RECTIF
- RECT
- INT RECTIFIER
- OMNIREL
- INTERNATIO
- INT RECT
- SEMCOR
- INTLRECT
- INTERNATIONA
- INTERNATIONAL R
- INTERNATIONAL MICROCIRCUITS
- InternationRectifer
- INTER RECTIFIER
- International Rectifier (IR)
- INTERNATI
- IR - International Rectifier
- INTERNATIONAL RECT
- INTERNATIONAL RECTIFIER SE
- INTERNATIONAL RECTIFIER HIREL PRODUCTS LLC
- INTER REC
- IR
- International Rect.
技术规格
Physical
Body MaterialMetal
Case/PackageTO-39
Contact PlatingLead, Tin
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)2.5 A
Drain to Source Breakdown Voltage-100 V
Drain to Source Resistance1.2 Ω
Drain to Source Voltage (Vdss)-100 V
Gate to Source Voltage (Vgs)20 V
Max Operating Temperature150 °C
Max Power Dissipation20 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance600 mΩ
PackagingBulk
Power Dissipation15 W
Voltage Rating (DC)-100 V