Infineon IRFB4110PBF

Name: Infineon IRFB4110PBF
Brand: Infineon
SKU: IRFB4110PBF

MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 3.7 Milliohms; ID 180A; TO-220AB; PD 370W

$ 1.1

Production

制造商页面数据表

价格与库存

授权分销商

未经授权的库存分销商

非授权经销商

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Distributor		SKU		Min	Pkg
Future Electronics	2	IRFB4110PBF	14	50	Tube			1.070	1.040	1.010
Arrow Electronics		IRFB4110PBF	1,625	1		1.413	1.413	1.355	1.355	1.355
Rutronik		TMOSP12115	2,200	50				1.007	0.806	0.806	19h
Newark		IRFB4110PBF	0	1		2.990	1.580	1.420	1.160	1.160
Rochester Electronics		IRFB4110PBF	0					1.330	1.100	0.984	12h

数据表和文档

下载 Infineon IRFB4110PBF 的数据表和制造商文档。

Newark

Datasheet8 页14 年前

Datasheet0 页0 年前

Datasheet8 页18 年前

IHS

iiiC

SOS electronic

RS (Formerly Allied Electronics)

库存历史记录

3 个月趋势:

-23.23%

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InfineonIRFB4110PBF

InfineonIRFB4110GPBF

Price @ 1000

$ 1.1

$ 2.07

Stock

1,156,978

138,325

Authorized Distributors

Mount

Through Hole

Case/Package

TO-220AB

Drain to Source Voltage (Vdss)

100 V

Continuous Drain Current (ID)

120 A

Threshold Voltage

4 V

Rds On Max

4.5 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

370 W

Input Capacitance

9.62 nF

供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2014-04-26

Lifecycle StatusProduction (Last Updated: 3 weeks ago)

描述

由其分销商提供的 Infineon IRFB4110PBF 的描述。

MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 3.7 Milliohms;ID 180A;TO-220AB;PD 370W

RS (Formerly Allied Electronics)

100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

Infineon SCT

Single N-Channel 100 V 4.5 mOhm 210 nC HEXFET® Power Mosfet - TO-220-3

Future Electronics

Power MOSFET, N Channel, 100 V, 180 A, 0.0045 ohm, TO-220AB, Through Hole

Avnet

Trans MOSFET N-CH 100V 180A 3-Pin(3+Tab) TO-220AB

Verical

MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 370 W

Distrelec

Power Field-Effect Transistor, 120A I(D), 100V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Semicontronic

N Channel Mosfet, 100V, 180A, To-220Ab; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:180A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Msl:- Rohs Compliant: Yes |Infineon IRFB4110PBF.

Newark

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Infineon