Infineon IRFB4020PBF

Name: Infineon IRFB4020PBF
Brand: Infineon
SKU: IRFB4020PBF

200V Single N-Channel Digital Audio HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

$ 0.595

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Distributor		SKU		Min	Pkg
Avnet		IRFB4020PBF	8,756	50				0.446	0.412	0.412	2d
Newark		IRFB4020PBF	1,273	1		1.920	1.370	0.821	0.595	0.509
Arrow Electronics		IRFB4020PBF	2,045	1		0.901	0.901	0.901	0.901	0.901
Future Electronics	4	IRFB4020PBF	1,000	50	Tube			0.510	0.495	0.460
Rochester Electronics	2	IRFB4020PBF	21,683					0.671	0.557	0.497	23h

数据表和文档

下载 Infineon IRFB4020PBF 的数据表和制造商文档。

IHS

Datasheet8 页20 年前

Datasheet9 页20 年前

iiiC

库存历史记录

3 个月趋势:

-7.78%

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2006-03-03

Lifecycle StatusProduction (Last Updated: 3 months ago)

描述

由其分销商提供的 Infineon IRFB4020PBF 的描述。

200V Single N-Channel Digital Audio HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

Infineon SCT

Single N-Channel 200 V 100 mOhm 29 nC HEXFET® Power Mosfet - TO-220-3

Future Electronics

MOSFET, N CH., DIGITAL AUDIO, 200V, 18A, 100 MOHM, 18 NC QG, TO-220AB, PB-FREE

RS (Formerly Allied Electronics)

Power MOSFET, N Channel, 200 V, 18 A, 0.1 ohm, TO-220AB, Through Hole

Avnet

Trans MOSFET N-CH 200V 18A 3-Pin(3+Tab) TO-220AB

Verical

Power Field-Effect Transistor, 18A I(D), 200V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Semicontronic

MOSFET, N, 200V, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:200V; On Resistance Rds(on):100mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4.9V; Power Dissipation Pd:100W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Base Number:4020; Current Id Max:18A; N-channel Gate Charge:18nC; Package / Case:TO-220AB; Power Dissipation Pd:100W; Power Dissipation Pd:100mW; Pulse Current Idm:52A; Termination Type:Through Hole; Voltage Vds Typ:200V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4.9V; Voltage Vgs th Min:3V

element14 APAC

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Infineon