Vishay IRF644PBF

Name: Vishay IRF644PBF
Brand: Vishay
SKU: IRF644PBF

Single N-Channel 250 V 0.28 Ohms Flange Mount Power Mosfet - TO-220AB

$ 0.779

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价格与库存

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Distributor		SKU		Min	Pkg
Newark		IRF644PBF	1,998	1		3.360	2.990	2.260	1.760	1.630
Arrow Electronics	3	IRF644PBF	2,305	1		0.528	0.513	0.507	0.507	0.507
Verical	5	IRF644PBF	2,304	12				0.507	0.507	0.507
Future Electronics		IRF644PBF	2,445	30	Tube			0.660	0.630	0.585
RS (Formerly Allied Electronics)		IRF644PBF	1,216	1	Bulk	1.350	1.350	1.350	1.350	1.350	5h

数据表和文档

下载 Vishay IRF644PBF 的数据表和制造商文档。

IHS

Datasheet7 页2 年前

Datasheet9 页14 年前

element14 APAC

Newark

Farnell

Future Electronics

库存历史记录

3 个月趋势:

-3.81%

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1993-09-01

Lifecycle StatusProduction (Last Updated: 4 months ago)

LTB Date2008-06-30

LTD Date2008-09-30

描述

由其分销商提供的 Vishay IRF644PBF 的描述。

Single N-Channel 250 V 0.28 Ohms Flange Mount Power Mosfet - TO-220AB

Future Electronics

Power MOSFET, N Channel, 250 V, 14 A, 0.28 ohm, TO-220AB, Through Hole

Avnet

Power Field-Effect Transistor, 14A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

IHS

MOSFET, N, 250V, 14A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:14A; Drain Source Voltage Vds:250V; On Resistance Rds(on):280mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:125W; Transistor Case Style:TO-220AB; No. of Pins:3; Current Id Max:14A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:1°C/W; Package / Case:TO-220AB; Power Dissipation Pd:125W; Power Dissipation Pd:125W; Pulse Current Idm:56A; Termination Type:Through Hole; Voltage Vds:250V; Voltage Vds Typ:250V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

element14 APAC