Infineon IRFB3206PBF

Name: Infineon IRFB3206PBF
Brand: Infineon
SKU: IRFB3206PBF

Trans MOSFET N-CH Si 60V 210A 3-Pin(3+Tab) TO-220AB Tube / MOSFET N-CH 60V 120A TO-220AB

$ 1.04

Production

制造商页面数据表

价格与库存

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Distributor		SKU		Min	Pkg
Arrow Electronics	2	IRFB3206PBF	18,099	1		2.779	1.721	0.822	0.806	0.806
Rutronik		TMOSP12103	1,150	50				0.840	0.671	0.671	22h
Rochester Electronics		IRFB3206PBF	4,994					1.250	1.040	0.925	14h
Future Electronics		IRFB3206PBF	0	50	Tube			0.855	0.805	0.765
RS (Formerly Allied Electronics)		IRFB3206PBF	0	1	Bulk	2.920	2.570	2.570	2.570	2.570	6h

数据表和文档

下载 Infineon IRFB3206PBF 的数据表和制造商文档。

Newark

Datasheet12 页12 年前

Datasheet11 页18 年前

IHS

iiiC

DigiKey

库存历史记录

3 个月趋势:

-14.27%

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InfineonIRFB3206PBF

InfineonIRFB3206GPBF

Price @ 1000

$ 1.04

$ 1.52

Stock

1,172,091

265,213

Authorized Distributors

Mount

Through Hole

Case/Package

TO-220AB

Drain to Source Voltage (Vdss)

60 V

Continuous Drain Current (ID)

120 A

Threshold Voltage

4 V

Rds On Max

3 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

300 W

Input Capacitance

6.54 nF

供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2007-04-27

Lifecycle StatusProduction (Last Updated: 3 weeks ago)

LTB Date2026-05-31

LTD Date2026-11-30

描述

由其分销商提供的 Infineon IRFB3206PBF 的描述。

Trans MOSFET N-CH Si 60V 210A 3-Pin(3+Tab) TO-220AB Tube / MOSFET N-CH 60V 120A TO-220AB

Win Source

MOSFET, N Ch., 60V, 210A, 3 MOHM, 120 NC QG, TO-220AB, Pb-Free

RS (Formerly Allied Electronics)

Infineon Technologies N channel HEXFET power MOSFET, 60 V, 120 A, TO-220, IRFB3206PBF

Burklin Elektronik

Single N-Channel 60V 3 mOhm 170 nC HEXFET® Power Mosfet - TO-220-3

Future Electronics

60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

Infineon SCT

Power MOSFET, N Channel, 60 V, 210 A, 0.003 ohm, TO-220AB, Through Hole

Avnet

MOSFET Operating temperature: -55...+175 °C Housing type: TO-220AB Polarity: N Power dissipation: 300 W

Distrelec

HEXFET Power MOSFET Power Field-Effect Transistor, 120A I(D), 60V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

ComSIT Distribution GmbH

MOSFET, N, 60V, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:210A; Drain Source Voltage Vds:60V; On Resistance Rds(on):3mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:300W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Base Number:3206; Current Id Max:210A; N-channel Gate Charge:120nC; Package / Case:TO-220AB; Power Dissipation Pd:300W; Power Dissipation Pd:300mW; Pulse Current Idm:840A; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V

element14 APAC

The IR MOSFET™ family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications. The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design. The optimized gate drive options enables designers the flexibility of selecting super, logic or normal level drives.

Infineon