价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | 42Y0423 | 1,916 | 1 | 2d | ||||||||
| Newark | IRF7842TRPBF | 1,916 | 1 | Cut Tape | ||||||||
| Arrow Electronics | IRF7842TRPBF | 3,990 | 1 | |||||||||
| Future Electronics | IRF7842TRPBF | 12,000 | 4K | Tape & Reel | ||||||||
| Rutronik | TMOSP12005 | 4,000 | 4K | 9h |
备用零件
Price @ 1000
$ 0.577
$ 0.784
Stock
1,389,396
281,609
Authorized Distributors
6
6
Mount
Surface Mount
Surface Mount
Case/Package
SOIC
SOIC
Drain to Source Voltage (Vdss)
40 V
40 V
Continuous Drain Current (ID)
18 A
18.6 A
Threshold Voltage
2.25 V
-
Rds On Max
5 mΩ
4.5 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
2.5 W
1 W
Input Capacitance
4.5 nF
7.535 nF
供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-09-21
Lifecycle StatusProduction (Last Updated: 4 months ago)
相关零件
InfineonIRF7832TRPBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 3.1Milliohms;ID 20A;SO-8;PD 2.5W;VGS +/-20V
InfineonIRF7832PBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 3.1Milliohms;ID 20A;SO-8;PD 2.5W;VGS +/-20V
描述
由其分销商提供的 Infineon IRF7842TRPBF 的描述。
Trans MOSFET N-CH 40V 18A 8-Pin SOIC N T/R / MOSFET N-CH 40V 18A 8-SOIC
Single N-Channel 40 V 2.5 W 50 nC Silicon Surface Mount Mosfet - SOIC-8
Power MOSFET, N Channel, 40 V, 18 A, 0.004 ohm, SOIC, Surface Mount
Power Field-Effect Transistor, 18A I(D), 40V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance
MOSFET Transistor; Transistor Polarity:N; MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:40V; On Resistance Rds(on):5.9mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:2.25V; Power Dissipation Pd:2.5W
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageSOIC
Contact PlatingTin
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)18 A
Current Rating18 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance5 mΩ
Drain to Source Voltage (Vdss)40 V
Element ConfigurationSingle
Fall Time5 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance4.5 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Nominal Vgs2.25 V
Number of Elements1
On-State Resistance5 mΩ
Package Quantity4000
PackagingTape & Reel
Power Dissipation2.5 W
Rds On Max5 mΩ
Resistance5 MΩ
Rise Time12 ns
Schedule B8541290080
Threshold Voltage2.25 V
Turn-Off Delay Time21 ns
Turn-On Delay Time14 ns
Voltage Rating (DC)40 V
Dimensions
Height1.4986 mm
Length4.9784 mm
Width3.9878 mm