onsemi FDS8870

Single N-Channel 30 V 2.5 W 112 nC Silicon Surface Mount Mosfet - SOIC-8

N-Channel PowerTrench® MOSFET 30V, 18A, 4.2mΩ

2.5W(Ta) 20V 2.5V@ 250µA 112nC@ 10V 1individualNChannel 30V 4.2mΩ@ 18A,10V 18A 4.615nF@15V SOIC-8 SMD mount 4.9mm*3.9mm*1.75mm

MOSFET, N, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:30V; On Resistance Rds(on):4.2mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.5V; Power Dissipation Pd:2.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:18A; Package / Case:SOIC; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:90A; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed.