Infineon IRF7842PBF

Name: Infineon IRF7842PBF
Brand: Infineon
SKU: IRF7842PBF

Transistor MOSFET Negative Channel 40 Volt 18A 8-Pin SOIC

Obsolete

制造商页面数据表

价格与库存

授权分销商

未经授权的库存分销商

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Distributor	SKU		Min	Pkg
RS (Formerly Allied Electronics)	IRF7842PBF	0	3800	Bulk					1.440	17h
Farnell	IRF7842PBF	0	5			0.737*	0.595*	0.591*	0.591*	1d
Win Source	WS-IRF7842PBF	46,955	125					0.321	0.321	1h
Worldway Electronics	IRF7842PBF	14,064	7	Tube		0.105	0.102	0.097	0.097	2h
ICPartonline	IRF7842PBF	24,681			0.800	0.760	0.720	0.680	0.640	7d

数据表和文档

下载 Infineon IRF7842PBF 的数据表和制造商文档。

Newark

Datasheet10 页11 年前

IHS

Farnell

TME

RS (Formerly Allied Electronics)

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2004-04-26

Lifecycle StatusObsolete (Last Updated: 4 months ago)

描述

由其分销商提供的 Infineon IRF7842PBF 的描述。

Transistor MOSFET Negative Channel 40 Volt 18A 8-Pin SOIC

Jameco

MOSFET, Power;N-Ch;VDSS 40V;RDS(ON) 4 Milliohms;ID 18A;SO-8;PD 2.5W;VGS +/-20V

RS (Formerly Allied Electronics)

Single N-Channel 40 V 5 mOhm 33 nC HEXFET® Power Mosfet - SOIC-8

Future Electronics

HEXFET Power MOSFET Small Signal Field-Effect Transistor, 18A I(D), 40V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

ComSIT Distribution GmbH

Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance

Infineon

MOSFET, N; Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:40V; On Resistance Rds(on):4mohm; Rds(on) Test Voltage Vgs:4.5V; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:18A; Package / Case:SOIC; Power Dissipation Pd:2.5W; Termination Type:SMD; Voltage Vds Typ:40V; Voltage Vgs Max:2.25V; Voltage Vgs Rds on Measurement:10V

element14 APAC