价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | IRF7343TRPBF | 93,000 | 4K | 16h | ||||||||
| Newark | IRF7343TRPBF | 83,179 | 1 | |||||||||
| Future Electronics | IRF7343TRPBF | 148,000 | 4K | Tape & Reel | ||||||||
| Rutronik | TMOS1169 | 4,000 | 4K | 21h | ||||||||
| Rochester Electronics | IRF7343TRPBF | 6,999 | 14h |
备用零件
Price @ 1000
$ 0.527
$ 1.228
$ 1.228
Stock
3,422,304
576,890
576,890
Authorized Distributors
6
2
2
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
SOIC
SOIC
SOIC
Drain to Source Voltage (Vdss)
55 V
55 V
55 V
Continuous Drain Current (ID)
4.7 A
4.7 A
4.7 A
Threshold Voltage
1 V
1 V
1 V
Rds On Max
50 mΩ
50 mΩ
50 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
2 W
2 W
2 W
Input Capacitance
740 pF
740 pF
740 pF
供应链
Country of OriginMainland China, Philippines, Thailand, Usa
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1997-10-29
Lifecycle StatusProduction (Last Updated: 5 months ago)
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ZXMN6A11DN8 Series Dual N-Channel 60 V 0.12 Ohm Power MOSFET SMT - SOIC-8
描述
由其分销商提供的 Infineon IRF7343TRPBF 的描述。
Dual N/P-Channel 55 V 0.05/0.105 Ohm 24/26 nC HEXFET® Power Mosfet - SOIC-8
Trans MOSFET N/P-CH 55V 4.7A/3.4A 8-Pin SOIC N T/R
Dual MOSFET, Complementary N and P Channel, 55 V, 55 V, 4.7 A, 4.7 A, 0.043 ohm
Transistor MOSFET N+P-Ch.4,7+3,4A/55V SO8 IRF 7343 TRPBF
55V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
Infineon SCT
HEXFET POWER MOSFET Power Field-Effect Transistor, 4.7A I(D), 55V, 0.05ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
MOSFET, NP CH, 55V, 3.4A, 8SOIC; Transistor Polarity:N and P Channel; Continuous Drain Current Id:4.7A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.043ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:2W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageSOIC
Contact PlatingTin
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)4.7 A
Current Rating4.7 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance50 mΩ
Drain to Source Voltage (Vdss)55 V
Gate to Source Voltage (Vgs)20 V
Input Capacitance740 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Nominal Vgs1 V
Number of Channels2
Number of Elements2
On-State Resistance50 mΩ
Package Quantity4000
PackagingTape & Reel
Power Dissipation2 W
Rds On Max50 mΩ
Resistance105 mΩ
Schedule B8541290080
Threshold Voltage1 V
Dimensions
Height1.75 mm
Length5 mm
Width4 mm