Vishay SI4100DY-T1-GE3

SI4100DY-T1-GE3 N-channel Mosfet Transistor, 6.8 A, 100 V, 8-PIN SOIC
$ 0.617
Production
制造商页面数据表

价格与库存

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DistributorSKUMinPkg
DigiKey
3
SI4100DY-T1-GE3CT-ND4,8351Cut Tape
Newark
2
SI4100DY-T1-GE31,5961Cut Tape
Future ElectronicsSI4100DY-T1-GE35,0002500Tape & Reel
Arrow ElectronicsSI4100DY-T1-GE32071
VericalSI4100DY-T1-GE320724

数据表和文档

下载 Vishay SI4100DY-T1-GE3 的数据表和制造商文档。

Newark

Datasheet9 页9 年前
Datasheet10 页10 年前
Datasheet10 页11 年前
Datasheet10 页11 年前

element14 APAC

RS (Formerly Allied Electronics)

库存历史记录

3 个月趋势:
+52.80%
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供应链

Country of OriginIsrael
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-09-25
Lifecycle StatusProduction (Last Updated: 4 months ago)

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描述

由其分销商提供的 Vishay SI4100DY-T1-GE3 的描述。

SI4100DY-T1-GE3 N-CHANNEL MOSFET TRANSISTOR, 6.8 A, 100 V, 8-PIN SOIC
RS (Formerly Allied Electronics)
2.5W(Ta),6W(Tc) 20V 4.5V@ 250¦ÌA 20nC@ 10 V 1N 100V 63m¦¸@ 4.4A,10V 6.8A 600pF@50V SOIC-8
Unikeyic (ICkey)
Si4100DY Series 100 V 6.8 A 63 mOhm Surface Mount N-Channel MOSFET - SO-8
Future Electronics
MOSFET, N-CH, 100V, 6.8A, SO8; Transistor Polarity:N Channel; Continuous Drain Current Id:6.8A; Drain Source Voltage Vds:100V; On Resistance Rds(on):51mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:6W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:6.8A; Power Dissipation Pd:6W; Voltage Vgs Max:20V
Farnell

图片

TME
Farnell
RS (Formerly Allied Electronics)
Future Electronics

制造商别名

Vishay 在全球拥有多个品牌，分销商可将其用作替代名称。Vishay 也可称为以下名称：

  • VIS
  • VISH
  • VISHAY INTERTECHNOLOGY INC
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  • Vishay Intertechnology
  • VISHA
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  • VISHY
  • VISHAY INTERTECHNOLOGY ASIA PTE LTD
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  • Vishay General Semiconductor - Diodes Division
  • Vishay Semiconductor Opto Division
  • VSHAY
  • VISH/IR
  • VSHY
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  • VISHAY INTERTECHNOLOGY ASIA PT
  • VISHAY ELECTRONIC
  • VISHAY AMERICAS INC
  • Vishay Semiconductor Diodes Division
  • VISHAY OPTO
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  • VISHAY FOIL RESISTORS
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