Infineon IRF7342TRPBF

Name: Infineon IRF7342TRPBF
Brand: Infineon
SKU: IRF7342TRPBF

Mosfet, Power; Dual P-ch; Vdss -55V; Rds(on) 0.105 Ohm; Id -3.4A; SO-8; Pd 2W; Vgs +/-20

$ 0.552

Production

制造商页面数据表

价格与库存

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非授权经销商

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Distributor		SKU		Min	Pkg
Avnet		IRF7342TRPBF	152,000	4K						0.274	1d
Newark		IRF7342TRPBF	3,482	1	Cut Tape	0.281	0.281	0.281	0.281	0.281
Future Electronics	2	IRF7342TRPBF	12,000	4K	Tape & Reel					0.590
Rutronik		TMOS1105	8,000	4K						0.360	5h
Rochester Electronics		IRF7342TRPBF	5,116					0.594	0.493	0.439	22h

数据表和文档

下载 Infineon IRF7342TRPBF 的数据表和制造商文档。

IHS

Datasheet8 页10 年前

element14 APAC

_legacy Avnet

SOS electronic

RS (Formerly Allied Electronics)

库存历史记录

3 个月趋势:

-3.07%

CAD 模型

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2016-05-26

Lifecycle StatusProduction (Last Updated: 5 months ago)

描述

由其分销商提供的 Infineon IRF7342TRPBF 的描述。

MOSFET, Power;Dual P-Ch;VDSS -55V;RDS(ON) 0.105Ohm;ID -3.4A;SO-8;PD 2W;VGS +/-20

RS (Formerly Allied Electronics)

Dual P-Channel 55 V 0.17 Ohm 38 nC HEXFET® Power Mosfet - SOIC-8

Future Electronics

Transistor MOSFET 2xP-Ch. 3,4A/55V SO8 IRF 7342 TRPBF

Rapid Electronics

Trans MOSFET P-CH 55V 3.4A 8-Pin SOIC T/R

Verical

Power Field-Effect Transistor, 3.4A I(D), 55V, 0.105ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

Semicontronic

MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual P Channel; Drain Source Voltage, Vds:-55V; Continuous Drain Current, Id:-3.4A; On Resistance, Rds(on):105mohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:8-SOIC ;RoHS Compliant: Yes

Newark

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.

Infineon