Infineon IRF6721STR1PBF

Name: Infineon IRF6721STR1PBF
Brand: Infineon
SKU: IRF6721STR1PBF

Power Field-Effect Transistor, 60A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

$ 1.75

Obsolete

制造商页面数据表

价格与库存

授权分销商

未经授权的库存分销商

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Distributor	SKU		Min	Pkg
RS (Formerly Allied Electronics)	IRF6721STR1PBF	0	1K	Bulk				1.750	1.350	2d
Farnell	IRF6721STR1PBF	0	5			0.991*	0.667*	0.585*	0.585*	1h
Component Stockers USA	IRF6721STR1PBF	656			99.990	99.990	99.990	99.990	99.990	>1wk
Worldway Electronics	IRF6721STR1PBF	16,483	7	Tape & Reel		0.444	0.431	0.408	0.408	6h
Win Source	WS-IRF6721STR1PBF	20								7h

数据表和文档

下载 Infineon IRF6721STR1PBF 的数据表和制造商文档。

IHS

Datasheet9 页17 年前

Newark

供应链

Lifecycle StatusObsolete (Last Updated: 4 months ago)

描述

由其分销商提供的 Infineon IRF6721STR1PBF 的描述。

Power Field-Effect Transistor, 60A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

IHS

MOSFET, N-Ch, VDSS 30V, RDS(ON) 5.1 mOhm, ID 14A, DirectFET

RS (Formerly Allied Electronics)

Trans MOSFET N-CH 30V 14A 6-Pin Direct-FET SQ T/R

Avnet

A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET SQ package rated at 14 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.

International Rectifier

MOSFET, N-CH, 30V, DIRECTFETSQ; Transistor Polarity:N Channel; Continuous Drain Current Id:14A; Drain Source Voltage Vds:30V; On Resistance Rds(on):5.1mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.9V; Operating Temperature Range:-40°C to +150°C; Transistor Case Style:SQ; MSL:MSL 3 - 168 hours; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:DirectFET; Current Id Max:14A; Package / Case:SQ; Power Dissipation Pd:2.2W; Pulse Current Idm:110A; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.4V; Voltage Vgs th Min:1.4V

element14 APAC