Infineon IRF6621TR1PBF

Name: Infineon IRF6621TR1PBF
Brand: Infineon
SKU: IRF6621TR1PBF

Trans MOSFET N-CH Si 30V 12A 6-Pin Direct-FET SQ T/R / MOSFET N-CH 30V 12A DIRECTFET

$ 2.55

Production

制造商页面数据表

价格与库存

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Distributor	SKU		Min	Pkg
RS (Formerly Allied Electronics)	IRF6621TR1PBF	0	1K	Bulk				2.550	2.310	2h
Farnell	IRF6621TR1PBF	0	1		0.722*	0.722*	0.722*	0.722*	0.722*	11h
Win Source	WS-IRF6621TR1PBF	16,000	115					0.375	0.336	11h
Worldway Electronics	IRF6621TR1PBF	10,302	7	Tape & Reel		0.720	0.698	0.661	0.661	11h
Aztech	IRF6621TR1PBF	6,145			5.280	5.280	5.280	5.280	5.280	7h

数据表和文档

下载 Infineon IRF6621TR1PBF 的数据表和制造商文档。

IHS

Datasheet10 页20 年前

Datasheet0 页0 年前

TME

Newark

供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2005-06-06

Lifecycle StatusProduction (Last Updated: 4 months ago)

描述

由其分销商提供的 Infineon IRF6621TR1PBF 的描述。

Trans MOSFET N-CH Si 30V 12A 6-Pin Direct-FET SQ T/R / MOSFET N-CH 30V 12A DIRECTFET

Win Source

30V SINGLE N-CHANNEL HEXFET POWER MOSFET, DIRECTFET SQ PKG

RS (Formerly Allied Electronics)

N CH MOSFET, 30V, 9.6A DIRECTFET SQ

element14 APAC

Power Field-Effect Transistor, 12A I(D), 30V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

IHS

MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:9.6A; On Resistance, Rds(on):9.1mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:DirectFET SQ ;RoHS Compliant: Yes

Newark