价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RS (Formerly Allied Electronics) | IRF6617TRPBF | 0 | 4800 | Bulk | 3h | |||||||
| Farnell | IRF6617TRPBF | 0 | 1 | Cut Tape | 9h | |||||||
| Weyland Electronics Group Pte. Ltd. | IRF6617TRPBF | 4,800 | 1 | Tape & Reel | 13h | |||||||
| Win Source | WS-IRF6617TRPBF | 18,484 | 60 | 11h | ||||||||
| Worldway Electronics | IRF6617 | 11,976 | 7 | 9h |
数据表和文档
下载 Infineon IRF6617TRPBF 的数据表和制造商文档。
官方数据表14 年前
供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-03-12
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2023-03-31
LTD Date2023-09-30
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描述
由其分销商提供的 Infineon IRF6617TRPBF 的描述。
Single N-Channel 30 V 8.1 mOhm 17 nC HEXFET® Power Mosfet - DirectFET®
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET package rated at 52 amperes., MG-WDSON-5, RoHS
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Trans MOSFET N-CH Si 30V 14A 7-Pin Direct-FET ST T/R
MOSFET Devices; INFINEON; IRF6617TRPBF; 30 V; 14 A; 20 V; 2.1 W
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Power Field-Effect Transistor, 55A I(D), 30V, 0.0081ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET 30V 1 N-CH HEXFET 8.1mOhms 11nC
IRF6617 - 12V-300V N-CHANNEL POW
Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:14A; On Resistance Rds(On):0.0062Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.35V Rohs Compliant: Yes
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
MountSurface Mount
Number of Pins5
Number of Terminals3
Technical
Continuous Drain Current (ID)14 A
Current Rating14 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance8.1 mΩ
Drain to Source Voltage (Vdss)30 V
Fall Time3.7 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.3 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation42 W
Manufacturer Package IdentifierMG-WDSON-5
Min Breakdown Voltage30 V
Min Operating Temperature-40 °C
Nominal Vgs2.35 V
Number of Channels1
Number of Elements1
On-State Resistance8.1 mΩ
Package Quantity4800
PackagingTape & Reel
Power Dissipation2.1 W
Rds On Max8.1 mΩ
Rise Time34 ns
Schedule B8541290080
Threshold Voltage2.35 V
Turn-Off Delay Time12 ns
Turn-On Delay Time11 ns
Voltage Rating (DC)30 V
Dimensions
Height620 µm
Length3.95 mm
Width3.95 mm
数据表和文档
下载 Infineon IRF6617TRPBF 的数据表和制造商文档。
官方数据表14 年前