onsemi FDB7030BL

Name: onsemi FDB7030BL
Brand: onsemi
SKU: FDB7030BL

N-Channel PowerTrench® MOSFET, Logic Level, 30V, 60A, 9mΩ

$ 0.503

Obsolete

制造商页面数据表

价格与库存

授权分销商

未经授权的库存分销商

非授权经销商

查看所有价格优惠

Distributor		SKU		Min	Pkg
Verical	6	FDB7030BL	5,046	620					0.559	0.498
Rochester Electronics		FDB7030BL	61,809					0.539	0.447	0.399	40m
Farnell	2	FDB7030BL.	0	1	Cut Tape	1.092*	1.092*	1.092*	1.092*	1.092*	1d
Component Stockers USA		FDB7030BL	90,520			0.450	0.450	0.420	0.380	0.380	15h
Win Source		WS-FDB7030BL	12,669	205					0.196	0.164	2h

数据表和文档

下载 onsemi FDB7030BL 的数据表和制造商文档。

IHS

Datasheet5 页22 年前

Farnell

element14 APAC

onsemi

Fairchild Semiconductor

库存历史记录

3 个月趋势:

+0.00%

CAD 模型

从我们值得信赖的合作伙伴处下载 onsemi FDB7030BL 符号、封装和 3D STEP 模型。

来源	eCAD	mCAD	文件
Component Search Engine	符号封装	3D	下载

下载 CAD 模型时，合作伙伴网站将在新标签页中打开

从 Octopart 下载 CAD 模型，即表示您同意我们的条款和条件以及隐私政策。

供应链

Country of OriginPhilippines

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date1998-07-01

Lifecycle StatusObsolete (Last Updated: 3 days ago)

Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 3 days ago)

描述

由其分销商提供的 onsemi FDB7030BL 的描述。

N-Channel PowerTrench® MOSFET, Logic Level, 30V, 60A, 9mΩ

onsemi

Trans MOSFET N-CH 30V 60A 3-Pin(2+Tab) D2PAK T/R

Verical

N-Channel 30 V 9 mohm Surface Mount Logic Level PowerTrench Mosfet TO-263AB

Future Electronics

N-CHANNEL LOGIC LEVEL POWERTRENCH MOSFET Power Field-Effect Transistor, 60A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

ComSIT Distribution GmbH

Mosfet, N-Ch, 30V, 60A, To-263Ab-3; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:30V; On Resistance Rds(On):0.0068Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.9V; Power Rohs Compliant: Yes |Onsemi FDB7030BL.

Newark

This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.

Fairchild Semiconductor