Infineon IRF540NLPBF

Name: Infineon IRF540NLPBF
Brand: Infineon
SKU: IRF540NLPBF

Mosfet, Power; N-ch; Vdss 100V; Rds(on) 44MILLIOHMS; Id 33A; TO-262; Pd 130W; Vgs +/-2

$ 1.346

Obsolete

制造商页面数据表

价格与库存

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未经授权的库存分销商

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Distributor		SKU		Min	Pkg
Rochester Electronics		IRF540NLPBF	22,000					0.882	0.732	0.653	5h
RS (Formerly Allied Electronics)		IRF540NLPBF	0	10	Bulk		2.170	1.960	1.960	1.960	22h
Farnell		IRF540NLPBF	0	1		1.977*	1.473*	1.418*	1.210*	1.185*	5h
Microchip USA	2	IRF540NL	243	600	Tube				3.216	3.216	2d
Verical		IRF540NLPBF	22,000	341					0.915	0.816

数据表和文档

下载 Infineon IRF540NLPBF 的数据表和制造商文档。

Farnell

Datasheet11 页22 年前

Datasheet11 页20 年前

Newark

IHS

RS (Formerly Allied Electronics)

DigiKey

库存历史记录

3 个月趋势:

-0.49%

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InfineonIRF540NLPBF

Price @ 1000

$ 1.346

Stock

385,991

Authorized Distributors

Mount

Through Hole

Case/Package

TO-262-3

Drain to Source Voltage (Vdss)

100 V

Continuous Drain Current (ID)

33 A

Threshold Voltage

4 V

Rds On Max

44 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

130 W

Input Capacitance

1.96 nF

供应链

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1996-04-01

Lifecycle StatusObsolete (Last Updated: 4 months ago)

描述

由其分销商提供的 Infineon IRF540NLPBF 的描述。

MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 44Milliohms;ID 33A;TO-262;PD 130W;VGS +/-2

RS (Formerly Allied Electronics)

Single N-Channel 100 V 44 mOhm 71 nC HEXFET® Power Mosfet - TO-262-3

Future Electronics

100V Single N-Channel HEXFET Power MOSFET in a TO-262 package, TO262-3, RoHS

Infineon SCT

Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA

Semicontronic

Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

Infineon

N CHANNEL MOSFET, 100V, 33A, TO-262; Tra; N CHANNEL MOSFET, 100V, 33A, TO-262; Transistor Polarity:N Channel; Continuous Drain Current Id:33A; Drain Source Voltage Vds:100V; On Resistance Rds(on):44mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; No. of Pins:3

element14 APAC

Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 33 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 44 / Gate-Source Voltage V = 20 / Fall Time ns = 35 / Rise Time ns = 35 / Turn-OFF Delay Time ns = 39 / Turn-ON Delay Time ns = 11 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = I2PAK / Pins = 3 / Mounting Type = Through Hole / MSL = Level-1 / Packaging = Tube / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 130

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