Infineon IRF9540NLPBF

Name: Infineon IRF9540NLPBF
Brand: Infineon
SKU: IRF9540NLPBF

IRF9540NLPBF P-channel MOSFET Transistor, 23 A, 100 V, 3-Pin TO-262

$ 1.815

Obsolete

制造商页面数据表

价格与库存

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Distributor		SKU		Min	Pkg
RS (Formerly Allied Electronics)		IRF9540NLPBF	0	5	Bulk		2.690	2.420	2.420	2.420	14h
Farnell		IRF9540NLPBF	0	1		3.927*	2.563*	2.563*	2.563*	2.563*	7h
Mouser		942-IRF9540NLPBF	1	1	Tube	3.350	2.180	1.670	1.210	1.210
Component Stockers USA		IRF9540NLPBF	18,600			1.240	0.890	0.850	1.110	1.010	3d
Win Source	2	WS-IRF9540NL	1,470	6			9.891	6.594	6.594	6.594	22h

数据表和文档

下载 Infineon IRF9540NLPBF 的数据表和制造商文档。

Newark

Datasheet11 页20 年前

Datasheet10 页20 年前

IHS

DigiKey

库存历史记录

3 个月趋势:

-18.68%

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date1997-06-04

Lifecycle StatusObsolete (Last Updated: 4 months ago)

描述

由其分销商提供的 Infineon IRF9540NLPBF 的描述。

IRF9540NLPBF P-channel MOSFET Transistor, 23 A, 100 V, 3-Pin TO-262

RS (Formerly Allied Electronics)

Single P-Channel 100 V 117 mOhm 110 nC HEXFET® Power Mosfet - TO-262

Future Electronics

-100V Single P-Channel HEXFET Power MOSFET in a TO-262 package, TO262-3, RoHS

Infineon SCT

HEXFET POWER MOSFET Power Field-Effect Transistor, 23A I(D), 100V, 0.117ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA

ComSIT Distribution GmbH

; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:3.1W; Transistor Case Style:TO-262; No. of Pins:3; SVHC:No SVHC

SHENGYU ELECTRONICS

Transistor Polarity:p Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:23A; On Resistance Rds(On):0.117Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Product Range:- Rohs Compliant: Yes

Newark

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Infineon

MOSFET, P, 100V, TO-262; Transistor Polarity:P Channel; Continuous Drain Current Id:23A; Drain Source Voltage Vds:100V; On Resistance Rds(on):117mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:3.1W; Transistor Case Style:TO-262; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Avalanche Single Pulse Energy Eas:430mJ; Capacitance Ciss Typ:1300pF; Current Iar:11A; Current Id Max:-23A; Fall Time tf:51ns; Gfs Min:5.3mA/V; On State Resistance Max:117mohm; P Channel Gate Charge:97nC; Package / Case:TO-262; Power Dissipation Pd:140W; Power Dissipation Pd:3.1W; Pulse Current Idm:76A; Rise Time:67ns; Termination Type:Through Hole; Voltage Vds:100V; Voltage Vds Typ:100V; Voltage Vgs Max:25V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V

element14 APAC