Infineon IRF5210LPBF

MOSFET, Power;P-Ch;VDSS -100V;RDS(ON) 0.06Ohm;ID -40A;TO-262;PD 200W;VGS +/-20V

Single P-Channel 100 V 0.06 Ohm 180 nC HEXFET® Power Mosfet - TO-262-3

-100V Single P-Channel HEXFET Power MOSFET in a TO-262 package, TO262-3, RoHS

Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA

MOSFET, P, 100V, 40A TO262; Transistor Polarity:P Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:-100V; On Resistance Rds(on):60mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:200W; Transistor Case Style:TO-262AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:-40A; Package / Case:TO-262AB; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulse Current Idm:140A; Termination Type:SMD; Voltage Vds Typ:100V; Voltage Vgs Max:-4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.