价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Newark | IRF3808STRLPBF | 2,614 | 1 | Cut Tape | ||||||||
| Future Electronics | IRF3808STRLPBF | 7,200 | 800 | Tape & Reel | ||||||||
| Arrow Electronics | IRF3808STRLPBF | 795 | 1 | |||||||||
| Rochester Electronics | IRF3808STRLPBF | 800 | 1h | |||||||||
| DigiKey | IRF3808STRLPBFCT-ND | 1,184 | 1 | Cut Tape |
备用零件
Price @ 1000
$ 1.483
$ 3.19
$ 3.19
Stock
1,978,294
42,255
42,255
Authorized Distributors
6
2
2
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
D2PAK
D2PAK
D2PAK
Drain to Source Voltage (Vdss)
75 V
75 V
75 V
Continuous Drain Current (ID)
75 A
75 A
75 A
Threshold Voltage
4 V
4 V
4 V
Rds On Max
7 mΩ
7 mΩ
7 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
200 W
200 W
200 W
Input Capacitance
5.31 nF
5.31 nF
5.31 nF
供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2001-12-19
Lifecycle StatusProduction (Last Updated: 4 months ago)
相关零件
InfineonIRF3808SPBF
MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 5.9Milliohms;ID 106A;D2Pak;PD 200W;VGS +/-2
STMicroelectronicsSTB140NF75T4
STB140NF75T4 N-CHANNEL MOSFET TRANSISTOR, 120 A, 75 V, 3-PIN D2PAK
描述
由其分销商提供的 Infineon IRF3808STRLPBF 的描述。
MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 5.9Milliohms;ID 106A;D2Pak;PD 200W;VGS +/-2
Power MOSFET, N Channel, 75 V, 106 A, 0.0059 ohm, TO-263 (D2PAK), Surface Mount
75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
Infineon SCT
Trans MOSFET N-CH 75V 106A 3-Pin(2+Tab) D2PAK T/R
Benefits: RoHS Compliant; Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:75V; Continuous Drain Current, Id:106A; On Resistance, Rds(on):7mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:D2PAK ;RoHS Compliant: Yes
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)75 A
Drain to Source Breakdown Voltage75 V
Drain to Source Resistance7 mΩ
Drain to Source Voltage (Vdss)75 V
Element ConfigurationSingle
Fall Time120 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance5.31 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation200 W
Min Breakdown Voltage75 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance7 mΩ
Package Quantity800
Power Dissipation200 W
Rds On Max7 mΩ
Resistance7 MΩ
Rise Time140 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time68 ns
Turn-On Delay Time16 ns
Dimensions
Height4.83 mm
Length10.668 mm
Width9.65 mm