供应链
Country of OriginMainland China, Malaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2005-09-21
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
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N-channel 60 V, 0.012 Ohm typ., 60 A STripFET II Power MOSFET in a D2PAK package
描述
由其分销商提供的 onsemi FDB5800 的描述。
N-Channel PowerTrench® MOSFET, Logic Level, 60V, 80A, 6mΩ
Trans MOSFET N-CH 60V 80A 3-Pin(2+Tab) D2PAK T/R
Avnet Japan
60V, 80A, 7 OHMS, NCH, LOGIC LEVEL POWER TRENCH MOSFET
MOSFET, N CH, 60V, 0.0046OHM, 80A, TO-26
MOSFETs 60V N-Ch Logic PowerTrench MOSFET
Fet 60V 6.0 Mohm D2Pak Rohs Compliant: Yes
242W(Tc) 20V 2.5V@ 250¦ÌA 135nC@ 10V 1N 60V 6m¦¸@ 80A,10V 14A,80A 6.625nF@15V TO-263 10.67mm*9.65mm*4.83mm
Power Field-Effect Transistor, 80A I(D), 60V, 0.0126ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET, N CH, 60V, 80A, TO-263AB-3; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0046ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:242W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-263AB; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013)
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageD2PAK
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight1.31247 g
Technical
Continuous Drain Current (ID)80 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance12.6 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time12.1 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance6.625 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation242 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation242 W
Rds On Max6 mΩ
Resistance6 MΩ
Rise Time22 ns
Schedule B8541290080
Threshold Voltage1 V
Turn-Off Delay Time27.1 ns
Turn-On Delay Time20.3 ns
Dimensions
Height5.08 mm
Length10.67 mm
Width11.33 mm