备用零件
Price @ 1000
$ 1.109
$ 1.59
$ 1.59
Stock
722,144
616,603
616,603
Authorized Distributors
6
4
4
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
D2PAK
D2PAK
D2PAK
Drain to Source Voltage (Vds)
75 V
75 V
75 V
Continuous Drain Current (ID)
80 A
85 A
85 A
Threshold Voltage
-
2 V
2 V
Rds On Max
9 mΩ
8.8 mΩ
8.8 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
140 W
160 W
160 W
Input Capacitance
3.07 nF
6.595 nF
6.595 nF
供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-02-14
Lifecycle StatusProduction (Last Updated: 9 months ago)
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描述
由其分销商提供的 Infineon IRFS3607TRLPBF 的描述。
MOSFET N-CH 75V 80A D2PAK N-Channel 75 V 80A (Tc) 140W (Tc) Surface Mount D2PAK
Power MOSFET, N Channel, 75 V, 80 A, 0.00734 ohm, TO-263 (D2PAK), Surface Mount
Single N-Channel 75 V 9 mOhm 84 nC HEXFET® Power Mosfet - D2PAK
75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
Infineon SCT
Trans MOSFET N-CH 75V 80A 3-Pin(2+Tab) D2PAK T/R
Power Field-Effect Transistor, 80A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Channel Type:N Channel; Drain Source Voltage Vds:75V; Continuous Drain Current Id:80A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:140W; No. Of Pins:3Pins Rohs Compliant: Yes |Infineon Technologies IRFS3607TRLPBF.
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 80 / Drain-Source Voltage (Vds) V = 75 / ON Resistance (Rds(on)) mOhm = 9 / Gate-Source Voltage V = 20 / Fall Time ns = 96 / Rise Time ns = 110 / Turn-OFF Delay Time ns = 43 / Turn-ON Delay Time ns = 16 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-263 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 140
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)80 A
Drain to Source Breakdown Voltage75 V
Drain to Source Resistance9 mΩ
Drain to Source Voltage (Vds)75 V
Element ConfigurationSingle
Fall Time96 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance3.07 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature150 °C
Max Power Dissipation140 W
Min Breakdown Voltage75 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance9 mΩ
Package Quantity800
Power Dissipation140 W
Rds On Max9 mΩ
Rise Time110 ns
Schedule B8541290080
Turn-Off Delay Time43 ns
Turn-On Delay Time16 ns
Dimensions
Height5.084 mm
Length10.668 mm
Width9.65 mm