Infineon IRFS3607TRLPBF

Name: Infineon IRFS3607TRLPBF
Brand: Infineon
SKU: IRFS3607TRLPBF

Power MOSFET, N Channel, 75 V, 80 A, 0.00734 ohm, TO-263 (D2PAK), Surface Mount

$ 0.633

Production

制造商页面数据表

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Distributor		SKU		Min	Pkg
Newark	2	IRFS3607TRLPBF	4,747	5	Cut Tape		1.360	1.130	1.130	1.130
Arrow Electronics	4	IRFS3607TRLPBF	11,397	1		0.556	0.556	0.556	0.556	0.556
Future Electronics	2	IRFS3607TRLPBF	1,600	800	Tape & Reel				0.550	0.525
Rochester Electronics	2	IRFS3607TRLPBF	8,000					0.758	0.629	0.561	23h
Avnet		IRFS3607TRLPBF	0	3200						0.488	2d

数据表和文档

下载 Infineon IRFS3607TRLPBF 的数据表和制造商文档。

Newark

Datasheet11 页14 年前

Datasheet11 页18 年前

Datasheet11 页16 年前

IHS

库存历史记录

3 个月趋势:

+66.95%

CAD 模型

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来源	eCAD	mCAD	文件
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SnapEDA	封装	3D	下载

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InfineonIRFS3607TRLPBF

onsemiFDB088N08

Price @ 1000

$ 0.633

$ 1.589

Stock

605,560

201,137

Authorized Distributors

Mount

Surface Mount

Case/Package

D2PAK

Drain to Source Voltage (Vdss)

75 V

Continuous Drain Current (ID)

80 A

85 A

Threshold Voltage

2 V

Rds On Max

9 mΩ

8.8 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

140 W

160 W

Input Capacitance

3.07 nF

6.595 nF

供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2008-02-14

Lifecycle StatusProduction (Last Updated: 4 months ago)

描述

由其分销商提供的 Infineon IRFS3607TRLPBF 的描述。

Power MOSFET, N Channel, 75 V, 80 A, 0.00734 ohm, TO-263 (D2PAK), Surface Mount

EBV Elektronik

Single N-Channel 75 V 9 mOhm 84 nC HEXFET® Power Mosfet - D2PAK

Future Electronics

75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

Infineon SCT

Trans MOSFET N-CH 75V 80A 3-Pin(2+Tab) D2PAK T/R

Verical

Power Field-Effect Transistor, 80A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Semicontronic

Channel Type:N Channel; Drain Source Voltage Vds:75V; Continuous Drain Current Id:80A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Power Dissipation:140W; No. Of Pins:3Pins Rohs Compliant: Yes |Infineon Technologies IRFS3607TRLPBF.

Newark

Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 80 / Drain-Source Voltage (Vds) V = 75 / ON Resistance (Rds(on)) mOhm = 9 / Gate-Source Voltage V = 20 / Fall Time ns = 96 / Rise Time ns = 110 / Turn-OFF Delay Time ns = 43 / Turn-ON Delay Time ns = 16 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-263 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 140

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