Infineon IRF2807PBF

Name: Infineon IRF2807PBF
Brand: Infineon
SKU: IRF2807PBF

MOSFET, Power; N-Ch; VDSS 75V; RDS(ON) 13 Milliohms; ID 82A; TO-220AB; PD 230W; gFS 38S

$ 0.782

NRND

制造商页面数据表

价格与库存

授权分销商

未经授权的库存分销商

非授权经销商

查看所有价格优惠

Distributor		SKU		Min	Pkg
Newark		IRF2807PBF	407	1		2.510	1.880	1.260	0.999	0.933
Arrow Electronics	2	IRF2807PBF	84,194	1		2.668	1.298	1.162	0.866	0.866
Future Electronics	2	IRF2807PBF	3,250	50	Tube			1.110	1.080	1.060
Rochester Electronics		IRF2807PBF	15,497					0.856	0.711	0.633	15h
RS (Formerly Allied Electronics)		IRF2807PBF	38	1	Bulk	2.260	1.990	1.990	1.990	1.990	7h

数据表和文档

下载 Infineon IRF2807PBF 的数据表和制造商文档。

Newark

Datasheet8 页15 年前

IHS

Factory Futures

Mouser

Jameco

库存历史记录

3 个月趋势:

+10.33%

CAD 模型

从我们值得信赖的合作伙伴处下载 Infineon IRF2807PBF 符号、封装和 3D STEP 模型。

来源	eCAD	mCAD	文件
Component Search Engine	符号封装	3D	下载
EE Concierge	符号封装
SnapEDA	封装	3D	下载
Ultra Librarian	符号封装		下载

下载 CAD 模型时，合作伙伴网站将在新标签页中打开

从 Octopart 下载 CAD 模型，即表示您同意我们的条款和条件以及隐私政策。

备用零件

此零件

备用零件

InfineonIRF2807PBF

InfineonAUIRF2807

Price @ 1000

$ 0.782

$ 1.1

Stock

2,521,995

76,457

Authorized Distributors

Mount

Surface Mount, Through Hole

Through Hole

Case/Package

TO-220AB

Drain to Source Voltage (Vdss)

75 V

Continuous Drain Current (ID)

75 A

Threshold Voltage

4 V

2 V

Rds On Max

13 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

200 W

230 W

Input Capacitance

3.82 nF

供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1998-01-01

Lifecycle StatusNRND (Last Updated: 3 months ago)

描述

由其分销商提供的 Infineon IRF2807PBF 的描述。

MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 13 Milliohms;ID 82A;TO-220AB;PD 230W;gFS 38S

RS (Formerly Allied Electronics)

Single N-Channel 75 V 13 mOhm 160 nC HEXFET® Power Mosfet - TO-220-3

Future Electronics

75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

Infineon SCT

Power MOSFET, N Channel, 75 V, 71 A, 0.013 ohm, TO-220AB, Through Hole

Avnet

Trans MOSFET N-CH 80V 82A 3-Pin(3+Tab) TO-220AB

Verical

N Channel Mosfet, 75V, 82A To-220Ab; Channel Type:N Channel; Drain Source Voltage Vds:75V; Continuous Drain Current Id:82A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Msl:- Rohs Compliant: Yes |Infineon IRF2807PBF.

Newark

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design

Infineon

Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 82 / Drain-Source Voltage (Vds) V = 75 / ON Resistance (Rds(on)) mOhm = 13 / Gate-Source Voltage V = 20 / Fall Time ns = 48 / Rise Time ns = 64 / Turn-OFF Delay Time ns = 49 / Turn-ON Delay Time ns = 13 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-220AB / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Power Dissipation (Pd) W = 230

Distrelec

MOSFET, N, 75V, 82A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:71A; Drain Source Voltage Vds:75V; On Resistance Rds(on):13mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:150W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:82A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:0.75°C/W; Lead Spacing:2.54mm; No. of Transistors:1; On State resistance @ Vgs = 10V:13mohm; Package / Case:TO-220AB; Pin Format:1 g; 2 d/tab; 3 s; Power Dissipation Pd:150W; Power Dissipation Pd:150W; Pulse Current Idm:280A; Termination Type:Through Hole; Voltage Vds Typ:75V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

element14 APAC