Infineon IRF1010NPBF

Name: Infineon IRF1010NPBF
Brand: Infineon
SKU: IRF1010NPBF

MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 11 Milliohms; ID 85A; TO-220AB; PD 180W; gFS 32S

$ 2.06

Obsolete

制造商页面数据表

价格与库存

授权分销商

未经授权的库存分销商

非授权经销商

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Distributor		SKU		Min	Pkg
RS (Formerly Allied Electronics)		IRF1010NPBF	0	1	Bulk	2.350	2.060	2.060	2.060	2.060	3h
Farnell		IRF1010NPBF	0	1		2.115*	1.161*	1.161*	1.161*	1.161*	1h
Component Stockers USA		IRF1010NPBF	5,524			0.740	0.740	0.640	0.700	0.700	>1wk
Weyland Electronics Group Pte. Ltd.		IRF1010NPBF	5,000	1	Tape & Reel	4.486	4.486	4.486	4.486	4.486	1d
Win Source	2	WS-IRF1010N	12,285	35				1.250	1.015	1.015	2h

数据表和文档

下载 Infineon IRF1010NPBF 的数据表和制造商文档。

Newark

Datasheet9 页15 年前

Datasheet8 页15 年前

IHS

DigiKey

Mouser

iiiC

库存历史记录

3 个月趋势:

Restocked

CAD 模型

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EE Concierge	符号封装

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date1995-11-01

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2024-09-30

LTD Date2025-03-31

描述

由其分销商提供的 Infineon IRF1010NPBF 的描述。

MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 11 Milliohms;ID 85A;TO-220AB;PD 180W;gFS 32S

RS (Formerly Allied Electronics)

Single N-Channel 55 V 11 mOhm 120 nC HEXFET® Power Mosfet - TO-220-3

Future Electronics

55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

Infineon SCT

Trans MOSFET N-CH Si 55V 85A 3-Pin(3+Tab) TO-220AB

Verical

MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 180 W

Distrelec

Power Field-Effect Transistor, 85A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Semicontronic

Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

Infineon

MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:85A; On Resistance, Rds(on):11mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220AB ;RoHS Compliant: Yes

Newark

MOSFET, N, 55V, 72A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:68A; Drain Source Voltage Vds:55V; On Resistance Rds(on):12.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:115W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:85A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:1.2°C/W; Lead Spacing:2.54mm; No. of Transistors:1; On State resistance @ Vgs = 10V:11mohm; Package / Case:TO-220AB; Pin Format:1 g; 2 d/tab; 3 s; Power Dissipation Pd:115W; Power Dissipation Pd:115W; Pulse Current Idm:270A; Termination Type:Through Hole; Voltage Vds Typ:55V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

element14 APAC