Infineon IRF1503SPBF

Name: Infineon IRF1503SPBF
Brand: Infineon
SKU: IRF1503SPBF

Mosfet, Power; N-ch; Vdss 30V; Rds(on) 2.6MILLIOHMS; Id 75A; D2PAK; Pd 200W; Vgs +/-20

$ 1.337

Obsolete

制造商页面数据表

价格与库存

授权分销商

未经授权的库存分销商

非授权经销商

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Distributor	SKU		Min	Pkg
Rochester Electronics	IRF1503SPBF	3,570					1.220	1.090	1.020	14h
Arrow Electronics	IRF1503SPBF	57	1		1.807	1.665	1.584	1.584	1.584
RS (Formerly Allied Electronics)	IRF1503SPBF	0	3200	Bulk					5.590	3h
Farnell	IRF1503SPBF	0	1		2.946*	2.946*	1.628*	1.547*	1.547*	14h
Win Source	WS-IRF1503SPBF	17,000	40				1.242	1.010	1.010	15h

数据表和文档

下载 Infineon IRF1503SPBF 的数据表和制造商文档。

IHS

Datasheet11 页15 年前

Datasheet12 页15 年前

Newark

RS (Formerly Allied Electronics)

iiiC

DigiKey

库存历史记录

3 个月趋势:

-3.05%

CAD 模型

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来源	eCAD	mCAD	文件
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SnapEDA	封装		下载

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供应链

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2004-06-21

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2018-12-15

LTD Date2019-06-15

描述

由其分销商提供的 Infineon IRF1503SPBF 的描述。

MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 2.6Milliohms;ID 75A;D2Pak;PD 200W;VGS +/-20

RS (Formerly Allied Electronics)

Single N-Channel 30 V 3.3 mOhm 200 nC HEXFET® Power Mosfet - D2PAK

Future Electronics

30V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

Infineon SCT

HEXFET Power MOSFET Power Field-Effect Transistor, 75A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

ComSIT Distribution GmbH

Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

Infineon

MOSFET, N, 30V, 190A, D2-PAK; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:190A; Resistance, Rds On:0.0033ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:D2-PAK; Termination Type:SMD; Alternate Case Style:D2-PAK; Current, Idm Pulse:960A; Power Dissipation:200W; Power, Pd:200W; Resistance, Rds on @ Vgs = 10V:0.0033ohm; Thermal Resistance, Junction to Case A:0.75°C/W; Voltage, Vds:30V; Voltage, Vds Max:30V; Voltage, Vgs th Max:4V

Farnell