供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-12-14
Lifecycle StatusEOL (Last Updated: 1 month ago)
LTB Date2026-09-14
LTD Date2027-03-14
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描述
由其分销商提供的 STMicroelectronics STB120N4LF6 的描述。
N-channel 40 V, 3.1 mOhm, 80 A, D2PAK STripFET(TM) VI DeepGATE(TM) Power MOSFET
Trans MOSFET N-CH 40V 80A Automotive 3-Pin(2+Tab) D2PAK T/R / MOSFET N-CH 40V 80A D2PAK
STB120 Series 40 V 80 A 4 mOhm 110 W 80 nC N-Channel MOSFET - D2PAK
Power Field-Effect Transistor, 80A I(D), 40V, 0.0059ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
110W(Tc) 20V 3V@ 250¦ÌA 80nC@ 10 V 1individualNChannel 40V 4m¦¸@ 40A,10V 80A 4.3nF@25V D2PAK£¬TO-263 SMD mount 4.83mm(height)
Mosfet, N Ch, 40V, 80A, To-263; Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:80A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:1V; Product Range:-Rohs Compliant: Yes |Stmicroelectronics STB120N4LF6
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)80 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance5.9 mΩ
Drain to Source Voltage (Vdss)40 V
Element ConfigurationSingle
Fall Time45 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance4.3 nF
Max Operating Temperature175 °C
Max Power Dissipation110 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape and Reel
Power Dissipation110 W
Rds On Max4 mΩ
Resistance4 MΩ
Rise Time95 ns
Threshold Voltage1 V
Turn-Off Delay Time125 ns
Turn-On Delay Time15 ns
Dimensions
Height4.6 mm
Length10.75 mm
Width10.4 mm