Infineon IRF1404ZPBF

Name: Infineon IRF1404ZPBF
Brand: Infineon
SKU: IRF1404ZPBF

Mosfet, Power; N-ch; Vdss 40V; Rds(on) 2.7MILLIOHMS; Id 190A; TO-220AB; Pd 220W; -55DE

$ 0.853

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价格与库存

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Distributor		SKU		Min	Pkg
Rochester Electronics	2	IRF1404ZPBF	61,192					0.866	0.719	0.641	19m
Arrow Electronics	3	IRF1404ZPBF	15,100	1		1.054	0.895	0.677	0.583	0.583
DigiKey		IRF1404ZPBF-ND	592	1	Tube	2.880	1.847	1.257	0.923	0.736
Newark		IRF1404ZPBF	0	1		2.480	1.690	1.070	0.977	0.977
Future Electronics	2	IRF1404ZPBF	0	50	Tube			0.945	0.895	0.850

数据表和文档

下载 Infineon IRF1404ZPBF 的数据表和制造商文档。

IHS

Datasheet12 页13 年前

Datasheet13 页13 年前

Newark

RS (Formerly Allied Electronics)

iiiC

DigiKey

库存历史记录

3 个月趋势:

-14.03%

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InfineonIRF1404ZPBF

Price @ 1000

$ 0.853

Stock

756,682

Authorized Distributors

Mount

Through Hole

Case/Package

TO-220AB

Drain to Source Voltage (Vdss)

40 V

Continuous Drain Current (ID)

75 A

Threshold Voltage

4 V

Rds On Max

3.7 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

200 W

Input Capacitance

4.34 nF

供应链

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2003-03-06

Lifecycle StatusProduction (Last Updated: 1 month ago)

LTB Date2012-06-01

LTD Date2012-09-01

描述

由其分销商提供的 Infineon IRF1404ZPBF 的描述。

MOSFET, Power;N-Ch;VDSS 40V;RDS(ON) 2.7Milliohms;ID 190A;TO-220AB;PD 220W;-55de

RS (Formerly Allied Electronics)

Single N-Channel 40 V 3.7 mOhm 150 nC HEXFET® Power Mosfet - TO-220-3

Future Electronics

Power Field-Effect Transistor, 120A I(D), 40V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Abacus Technologies

40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package

International Rectifier

Trans MOSFET N-CH 40V 190A 3-Pin(3+Tab) TO-220AB Tube

Verical

Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature | Target Applications: AC-DC; Consumer Full-Bridge; Full-Bridge; Push-Pull

Infineon

N CH MOSFET, 40V, 190A, TO-220AB; Transi; Transistor Polarity:N Channel; Continuous Drain Current Id:190A; Drain Source Voltage Vds:40V; On Resistance Rds(on):3.7mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:220W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:190A; Junction to Case Thermal Resistance A:0.65°C/W; On State resistance @ Vgs = 10V:3.7ohm; Package / Case:TO-220AB; Power Dissipation Pd:220W; Power Dissipation Pd:220W; Pulse Current Idm:750A; Termination Type:Through Hole; Voltage Vds Typ:40V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

element14 APAC