Infineon IRF4104PBF

Name: Infineon IRF4104PBF
Brand: Infineon
SKU: IRF4104PBF

Mosfet, Power; N-ch; Vdss 40V; Rds(on) 4.3MILLIOHMS; Id 120A; TO-220AB; Pd 140W; -55DE

$ 0.719

Obsolete

制造商页面数据表

价格与库存

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未经授权的库存分销商

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Distributor		SKU		Min	Pkg
Arrow Electronics		IRF4104PBF	596	1		0.719	0.719	0.719	0.719	0.719
Rochester Electronics		IRF4104PBF	225,736					0.854	0.709	0.632	6h
RS (Formerly Allied Electronics)		IRF4104PBF	0	5	Bulk		2.260	2.030	2.030	2.030	22h
Avnet		IRF4104PBF	0	1K							1d
Farnell	2	IRF4104PBF	0	1		2.382*	2.219*	0.972*	0.972*	0.972*	5h

数据表和文档

下载 Infineon IRF4104PBF 的数据表和制造商文档。

IHS

Datasheet12 页15 年前

Datasheet13 页15 年前

Datasheet13 页22 年前

Factory Futures

DigiKey

iiiC

RS (Formerly Allied Electronics)

库存历史记录

3 个月趋势:

-0.19%

CAD 模型

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InfineonIRF4104PBF

InfineonAUIRF4104

Price @ 1000

$ 0.719

$ 2.705

Stock

1,150,968

348,785

Authorized Distributors

Mount

Through Hole

Case/Package

TO-220AB

TO-220-3

Drain to Source Voltage (Vdss)

40 V

Continuous Drain Current (ID)

75 A

Threshold Voltage

4 V

2 V

Rds On Max

5.5 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

140 W

Input Capacitance

3 nF

供应链

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2003-04-04

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2009-08-19

LTD Date2010-02-19

描述

由其分销商提供的 Infineon IRF4104PBF 的描述。

MOSFET, Power;N-Ch;VDSS 40V;RDS(ON) 4.3Milliohms;ID 120A;TO-220AB;PD 140W;-55de

RS (Formerly Allied Electronics)

Single N-Channel 40 V 5.5 mOhm 100 nC HEXFET® Power Mosfet - TO-220-3

Future Electronics

40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

Infineon SCT

MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 140 W

Distrelec

HEXFET POWER MOSFET Power Field-Effect Transistor, 75A I(D), 40V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

ComSIT Distribution GmbH

MOSFET, N, 40V, 120A, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 120A; Drain Source Voltage Vds: 40V; On Resistance Rds(on): 0.0043ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power

Farnell

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Infineon