Infineon IRL1404ZPBF

Name: Infineon IRL1404ZPBF
Brand: Infineon
SKU: IRL1404ZPBF

Mosfet, Power; N-ch; Vdss 40V; Rds(on) 2.5MILLIOHMS; Id 200A; TO-220AB; Pd 230W; -55DE

$ 1.15

Obsolete

制造商页面数据表

价格与库存

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Distributor		SKU		Min	Pkg
Arrow Electronics		IRL1404ZPBF	6	1		0.879	0.879	0.879	0.879	0.879
Rochester Electronics	2	IRL1404ZPBF	1,720					1.390	1.150	1.030	13h
RS (Formerly Allied Electronics)		IRL1404ZPBF	0	2	Bulk		3.150	3.000	3.000	3.000	5h
Farnell		IRL1404ZPBF	0	1		2.927*	2.494*	1.789*	1.450*	1.450*	1d
Microchip USA		IRL1404ZPBF	314	150	Tube				16.445	16.445	6h

数据表和文档

下载 Infineon IRL1404ZPBF 的数据表和制造商文档。

IHS

Datasheet13 页13 年前

Datasheet12 页13 年前

Newark

element14 APAC

RS (Formerly Allied Electronics)

DigiKey

库存历史记录

3 个月趋势:

-3.80%

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InfineonIRL1404ZPBF

InfineonAUIRL1404Z

Price @ 1000

$ 1.15

$ 1.34

Stock

438,069

115,614

Authorized Distributors

Mount

Through Hole

Case/Package

TO-220AB

TO-220-3

Drain to Source Voltage (Vdss)

40 V

Continuous Drain Current (ID)

75 A

160 A

Threshold Voltage

2.7 V

1.4 V

Rds On Max

3.1 mΩ

Gate to Source Voltage (Vgs)

16 V

Power Dissipation

230 W

200 W

Input Capacitance

5.08 nF

供应链

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2003-10-28

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2025-03-31

LTD Date2025-09-30

描述

由其分销商提供的 Infineon IRL1404ZPBF 的描述。

MOSFET, Power;N-Ch;VDSS 40V;RDS(ON) 2.5Milliohms;ID 200A;TO-220AB;PD 230W;-55de

RS (Formerly Allied Electronics)

40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

Infineon SCT

Single N-Channel 40 V 5.9 mOhm 110 nC HEXFET® Power Mosfet - TO-220-3

Future Electronics

Trans MOSFET N-CH 40V 200A 3-Pin(3+Tab) TO-220AB

Avnet

Power Field-Effect Transistor, 120A I(D), 40V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

IHS

MOSFET, N, 40V, 200A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:200A; Drain Source Voltage Vds:40V; On Resistance Rds(on):3.1mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.7V; Power Dissipation Pd:230W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:75A; Junction to Case Thermal Resistance A:0.65°C/W; On State resistance @ Vgs = 10V:3.1mohm; Package / Case:TO-220AB; Power Dissipation Pd:230W; Power Dissipation Pd:230W; Pulse Current Idm:790A; Termination Type:Through Hole; Voltage Vds Typ:40V; Voltage Vgs Max:2.7V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.7V

element14 APAC

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Infineon