Infineon IRF1407STRLPBF

Name: Infineon IRF1407STRLPBF
Brand: Infineon
SKU: IRF1407STRLPBF

Power MOSFET(Vdss = 75V, Rds(on) = 0.0078Ω, Id = 100A⑥) | MOSFET N-CH 75V 100A D2PAK

$ 0.946

Obsolete

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价格与库存

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Distributor		SKU		Min	Pkg
Newark		IRF1407STRLPBF	800	1		2.480	1.950	1.560	1.560	1.560
Arrow Electronics	2	IRF1407STRLPBF	800	1		1.027	1.027	1.027	1.027	1.027
Rochester Electronics		IRF1407STRLPBF	8,190					1.120	0.930	0.829	23h
DigiKey	3	IRF1407STRLPBFCT-ND	3,213	1	Cut Tape	2.790	1.801	1.239	1.239	1.239
RS (Formerly Allied Electronics)		IRF1407STRLPBF	0	8	Bulk		2.640	2.380	2.380	2.380	15h

数据表和文档

下载 Infineon IRF1407STRLPBF 的数据表和制造商文档。

IHS

Datasheet12 页9 年前

Datasheet12 页21 年前

Newark

element14 APAC

iiiC

库存历史记录

3 个月趋势:

-7.52%

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InfineonIRF1407STRLPBF

InfineonIRF1407SPBF

Price @ 1000

$ 0.946

$ 3.09

Stock

328,220

89,020

Authorized Distributors

Mount

Surface Mount

Case/Package

D2PAK

Drain to Source Voltage (Vdss)

75 V

Continuous Drain Current (ID)

75 A

Threshold Voltage

4 V

Rds On Max

7.8 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

3.8 W

200 W

Input Capacitance

5.6 nF

供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2001-10-05

Lifecycle StatusObsolete (Last Updated: 1 month ago)

LTB Date2008-03-13

LTD Date2008-09-13

描述

由其分销商提供的 Infineon IRF1407STRLPBF 的描述。

Power MOSFET(Vdss = 75V, Rds(on) = 0.0078Ω, Id = 100A⑥) | MOSFET N-CH 75V 100A D2PAK

Win Source

Single N-Channel 75 V 0.0078 Ohm 250 nC HEXFET® Power Mosfet - D2PAK

Future Electronics

Power MOSFET, N Channel, 75 V, 100 A, 0.0078 ohm, TO-263 (D2PAK), Surface Mount

Avnet

75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS

Infineon SCT

Trans MOSFET N-CH 75V 100A 3-Pin (2+Tab) D2PAK T/R

Verical

Transistor Polarity:n Channel; Drain Source Voltage Vds:75V; Continuous Drain Current Id:100A; On Resistance Rds(On):0.0078Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V Rohs Compliant: Yes

Newark

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Infineon

MOSFET, N, 75V, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:75V; On Resistance Rds(on):7.8mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Cont Current Id @ 100°C:70A; Cont Current Id @ 25°C:100A; Current Id Max:100A; Package / Case:D2-PAK; Power Dissipation Pd:200W; Power Dissipation Pd:3.8W; Pulse Current Idm:520A; Rth:0.75; Termination Type:SMD; Voltage Vds:75V; Voltage Vds Typ:75V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V

element14 APAC